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Browsing by Author "Sze, Simon. M."

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    Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure
    (2013-07-01)
    Tseng, Hsueh-Chih
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    Chang, Ting-Chang
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    Wu, Yi-Chun
    ;
    Wu, Sei-Wei
    ;
    Huang, Jheng-Jie
    This letter investigates self-compliance behavior for nonvolatile resistance random access memory using the indium tin oxide (ITO)/Gd:SiOx/TiN structure. Different current compliances in the electroforming process results in different trends in the set process, including a different self-compliance scale and one-or two-step set behaviors. The oxygen ions generated during the electroforming and set process drift to ITO, inducing a semiconductor-like ITO interface formation, which can be regarded as a self-built series resistor.