Browsing by Author "TAI, K"

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CAVITY ENHANCEMENT OF RESONANT FREQUENCIES IN SEMICONDUCTOR-LASERS SUBJECT TO OPTICAL-INJECTION
(1995-12-01)
SIMPSON, TB
;
LIU, JM
;
HUANG, KF
;
TAI, K
;
CLAYTON, CM
The injection of an optical signal into a semiconductor laser biased near or above the lasing threshold modifies the coupling between the free carriers and the intracavity field. The detuning between the frequency of the injected signal and the free-running oscillation frequency and the ratio of the photon lifetime to the carrier lifetime are key parameters in determining the enhancement of the carrier-field resonant coupling frequency and the stability of the output field. Experimental results using a vertical cavity surface emitting laser biased near threshold are in agreement with calculations using a lumped-element oscillator model.
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-11-01)
HUANG, KF
;
TAI, K
;
WU, CC
;
WYNN, JD
;
電子物理學系
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-07-22)
TAI, K
;
HUANG, KF
;
WU, CC
;
WYNN, JD
;
電子物理學系
Vertical cavity top surface emitting lasers in the 0.66 mum visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents I(th) are 3.9 and 4.6 mA at -75 and -25-degrees-C, respectively, for 15 mum diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I(th) of 12 mA at 25-degrees-C.
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-07-22)
TAI, K
;
HUANG, KF
;
WU, CC
;
WYNN, JD
;
電子物理學系
Vertical cavity top surface emitting lasers in the 0.66 mum visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents I(th) are 3.9 and 4.6 mA at -75 and -25-degrees-C, respectively, for 15 mum diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I(th) of 12 mA at 25-degrees-C.
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-01-01)
HUANG, KF
;
TAI, K
;
WU, CC
;
WYNN, JD
;
電子物理學系
HIGH-REFLECTIVITY ALAS0.52SB0.48/GAINAS(P) DISTRIBUTED BRAGG MIRROR ON INP SUBSTRATE FOR 1.3-1.55-MU-M WAVELENGTHS
(1989-08-17)
TAI, K
;
FISCHER, RJ
;
CHO, AY
;
HUANG, KF
;
交大名義發表
INSTABILITY IN SURFACE EMITTING LASERS DUE TO EXTERNAL OPTICAL FEEDBACK
(1993-01-01)
CHEN, HM
;
TAI, K
;
HUANG, KF
;
KAO, YH
;
WYNN, JD
Instability in the output of dc-biased surface emitting lasers due to an external cavity effect was observed. The output power spectrum exhibited multiple peaks with spacing corresponding to exactly the round-trip delay in silica fibers with length ranging from 2 m to 2 km. The magnitude of the peaks was enhanced in the spectral region centered at the laser relaxation frequency. With increased feedback, the background of the output spectrum was found to increase, indicating the presence of optical chaos. Numerical simulation based on the rate equation analysis was found to agree with the experiment, indicating the surface emitting lasers are well described by the rate equation and are susceptible to feedback as the edge emitting lasers.
RELIABILITY STUDIES OF 0.85 MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS - 50000-H MTTF AT 25-DEGREES-C
(1993-10-28)
WU, CC
;
TAI, K
;
HAUNG, KF
;
電子物理學系
;
電控工程研究所
Reliability studies of gain-guieded 0.85 mum GaAs/AlGaAs quantum well surface emitting lasers were performed on 45 randomly selected lasers operated at 25, 50 or 90-degrees-C with biased currents up to 15 mA (about four times the threshold values). At 25-degrees-C, no noticeable degradation was seen after 5000 h of operation. A 14% reduction of power was seen at 50-degrees-C after 2700h. A faster degradation on power output was seen at 90-degrees-C, though the lasers are still functional after 1000h. The mean time toward failure (MTTF) of these lasers operated at 25-degrees-C and 15mA is extrapolated to be approximately 5 x 10(4)h.
RELIABILITY STUDIES OF GAIN-GUIDED 0.85 MU-M GAAS/ALGAAS QUANTUM-WELL SURFACE-EMITTING LASERS
(1994-01-01)
WU, CC
;
TAI, K
;
HUANG, TC
;
HUANG, KF
;
電子物理學系
A reliability study of gain-guided 0.85 mum GaAs/AlGaAs quantum well surface emitting lasers is reported for the first time. 32 lasers were randomly selected to operate at 25 or 50 C with bias currents up to 15 mA, about 4 times the threshold values. The power outputs of the 32 lasers showed no noticeable degradation after 2000-3000 hours of operation.
TRANSVERSE-MODE EMISSION CHARACTERISTICS OF GAIN-GUIDED SURFACE-EMITTING LASERS
(1993-11-08)
TAI, K
;
LAI, Y
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HUANG, KF
;
HUANG, TC
;
LEE, TD
Transverse mode emission characteristics of gain-guided surface emitting lasers at 0.85 mum were investigated. Up to six nondegenerate circularly symmetrical modes were observed with detunings between the adjacent modes around 2.5 angstrom. Numerical simulations were performed. The calculated beam sizes, difference of modal gains to account for the side mode suppression ratio when operated with one dominant mode, and wavelength detunings agreed with experiments. Numerical simulations also predict that the mirror loss due to Gaussian beam diffraction is nonnegligible for the 1.3-1.55 mum devices.