Browsing by Author "TSAI, MH"

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AN EFFICIENT PRECLEAN OF ALUMINIZED SILICON SUBSTRATE FOR CHEMICAL-VAPOR-DEPOSITION OF SUBMICRON TUNGSTEN PLUGS
(1995-10-01)
YEH, WK
;
TSAI, MH
;
CHEN, SH
;
CHEN, MC
;
WANG, PJ
Preclean of aluminum trench and via patterned substrates is vital for successful selective chemical vapor deposition of tungsten (CVD-W). A convenient preclean method uses in situ. BCl3 plasma etching to remove the native metal oxide prior to conducting the CVD-W. During the plasma etching, however, the outsputtered aluminum oxide and aluminum can be redeposited on the sidewall of the trench and via hole and on the surface of the dielectric layer, where W nucleation is induced, resulting in creep-up and selectivity loss during tungsten deposition. By using a solution of hydroxylamine sulfate to pretreat the aluminum trench and via hole patterned substrates, we successfully avoid the creep-up and selectivity loss of W deposition.
AN EFFICIENT PRECLEAN OF ALUMINIZED SILICON SUBSTRATE FOR CHEMICAL-VAPOR-DEPOSITION OF SUBMICRON TUNGSTEN PLUGS
(1995-10-01)
YEH, WK
;
TSAI, MH
;
CHEN, SH
;
CHEN, MC
;
WANG, PJ
Preclean of aluminum trench and via patterned substrates is vital for successful selective chemical vapor deposition of tungsten (CVD-W). A convenient preclean method uses in situ. BCl3 plasma etching to remove the native metal oxide prior to conducting the CVD-W. During the plasma etching, however, the outsputtered aluminum oxide and aluminum can be redeposited on the sidewall of the trench and via hole and on the surface of the dielectric layer, where W nucleation is induced, resulting in creep-up and selectivity loss during tungsten deposition. By using a solution of hydroxylamine sulfate to pretreat the aluminum trench and via hole patterned substrates, we successfully avoid the creep-up and selectivity loss of W deposition.
COMPARISON OF CHEMICAL-VAPOR-DEPOSITION OF TIN USING TETRAKIS-DIETHYLAMINO-TITANIUM AND TETRAKIS-DIMETHYLAMINO-TITANIUM
(1994-12-15)
SUN, SC
;
TSAI, MH
;
交大名義發表
;
奈米中心
;
National Chiao Tung University
The attributes and limitations of chemically vapor-deposited titanium nitride films from the reaction of tetrakis-diethylamino-titanium with ammmonia and tetrakis-dimethylamino-titanium with ammonia are discussed. Deposited films were characterized by growth rate, resistivity, surface morphology and step coverage over contact structures. Films deposited without ammonia flow were unstable in the atmosphere and Auger analysis showed a higher relative carbon content. It was found that the deposition pressure had a stronger effect than did the deposition temperature on the bulk resistivity and surface roughness. A higher pressure has a tendency to reduce the resistivity. Films appear smooth at low deposition temperatures and low pressures. Films become rough at high deposition temperatures and high pressures. The deposition process and resulting TiN layers are successfully integrated in a chemcially vapor-deposited W plus fill application.
IMPROVEMENT OF SELECTIVITY DURING DIAMOND GROWTH UTILIZING A NEW PROCESS
(1995-01-15)
CHEN, CF
;
CHEN, SH
;
HONG, TM
;
TSAI, MH
;
交大名義發表
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
(1995-08-21)
TSAI, MH
;
SUN, SC
;
CHIU, HT
;
TSAI, CE
;
CHUANG, SH
We deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
(1995-08-21)
TSAI, MH
;
SUN, SC
;
CHIU, HT
;
TSAI, CE
;
CHUANG, SH
We deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.