Browsing by Author "TSAI CHUANG-CHUANG"

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METAL OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
(2012-05-10)
ZAN HSIAO-WEN
;
TSAI CHUANG-CHUANG
;
CHEN WEI-TSUNG
;
HSUEH HSIU-WEN
The instant disclosure relates to a metal oxide thin film transistor having a threshold voltage modification layer. The thin film transistor includes a gate electrode, a dielectric layer formed on the gate electrode, an active layer formed on the dielectric layer, a source electrode and a drain electrode disposed separately on the active layer, and a threshold voltage modulation layer formed on the active layer in direct contact with the back channel of the transistor. The threshold voltage modulation layer and the active layer have different work functions so that the threshold voltage modulation layer modulates the threshold voltage of devices and improve the performance of the transistor.
PHOTO TRANSISTOR
(2012-01-26)
ZAN HSIAO-WEN
;
MENG HSIN-FEI
;
TSAI CHUANG-CHUANG
;
CHEN WEI-TSUNG
;
CHAO YU-CHIANG
A phototransistor includes a substrate, a gate layer, a dielectric layer, an active layer, a source and a drain, and a light absorption layer. The gate layer is disposed on a top of the substrate, and the dielectric layer is disposed on a top of the gate layer. The active layer has a first bandgap and is disposed on a top of the dielectric layer, and the source and the drain are disposed on a top of the active layer. The light absorption layer has a second bandgap and is capped on the active layer, and the second bandgap is smaller than the first bandgap.