Browsing by Author "TSAY, WC"

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ELECTROLUMINESCENCE OF A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH QUANTUM-WELL-INJECTION STRUCTURES
(1994-09-01)
JEN, TS
;
SHIN, NF
;
TSAY, WC
;
CHEN, JY
;
NING, SL
In order to improve the electroluminescence (EL) characteristics of hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLEDs), the quantum-well-injection (QWI) structures have been incorporated into their intrinsic (i-) layer. Two types of TFLED were fabricated to study the effect of the incorporated QWI structures on their EL characteristics: the device I contains a step-gap QWI structure of barrier (15 angstrom)/well (45 angstrom)/barrier (15 angstrom) inserted at both the p-i and i-n interfaces, and the device Il has only one graded-gap QWI structure of barrier (10 angstrom)/well (10 angstrom)/barrier (10 angstrom) inserted at the p-i interface. The obtained brightness of device I was about 10 cd/m2 at an injection current density of 1 A/cm2. The emission light of device I was yellow-like as detected by human eyes. Whereas, for device II, the brightness was about 256 cd/m2 at 800 mA/cm2 and an orange light emission was observed.
HYDROGENATED AMORPHOUS-SILICON CARBIDE P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYERS INSERTED AT P-I INTERFACE
(1994-01-01)
JEN, TS
;
PAN, JW
;
SHIN, NF
;
TSAY, WC
;
HONG, JW
To improve the electroluminescence (EL) intensity of the hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), a barrier-layer (BL) structure had been inserted at its p-i interface and used to enhance the hole injection efficiency of TFLED under forward-bias operation. Two TFLEDs with different BL structures were studied. The device I had a 25 Angstrom A i-type single-barrier structure and the device II had an i-type double-barrier structure of barrier (10 Angstrom A)/well(10 Angstrom A)/barrier(10 Angstrom A). The obtainable brightness of device I was 342 cd/m(2) at an injection current density of 600 mA/cm(2). On the other hand, the device II had a brightness of 256 cd/ m(2) at 800 mA/cm(2). These brightnesses were about 3 orders of magnitude higher than that of a basic a-SiC:H p-i-n TFLED.