Browsing by Author "TSENG, HC"

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EFFECTS OF DRY-ETCHING DAMAGE REMOVAL ON LOW-TEMPERATURE SILICON SELECTIVE EPITAXIAL-GROWTH
(1995-10-01)
TSENG, HC
;
CHANG, CY
;
PAN, FM
;
CHEN, LP
;
電子工程學系及電子研究所
The epitaxial silicon layer selectively grown on the reactive ion etched (RIE) silicon substrate using CF4, CHF3 and Ar etching gases has been studied. Defects and contaminants induced by the RIE process result in a rough epilayer, and degrade the current-voltage (I-V) characteristics. An interfacial carbide layer is present between the epilayer and the RIE treated substrate. Using an efficient and convenient after-etching treatment with a CF4/O-2 low-energy plasma, we obtain a clean Si surface in the patterned oxide windows for selective epitaxial growth, and the electrical characteristics are significantly improved. (C) 1995 American Institute of Physics.
EFFECTS OF DRY-ETCHING DAMAGE REMOVAL ON LOW-TEMPERATURE SILICON SELECTIVE EPITAXIAL-GROWTH
(1995-10-01)
TSENG, HC
;
CHANG, CY
;
PAN, FM
;
CHEN, LP
;
電子工程學系及電子研究所
The epitaxial silicon layer selectively grown on the reactive ion etched (RIE) silicon substrate using CF4, CHF3 and Ar etching gases has been studied. Defects and contaminants induced by the RIE process result in a rough epilayer, and degrade the current-voltage (I-V) characteristics. An interfacial carbide layer is present between the epilayer and the RIE treated substrate. Using an efficient and convenient after-etching treatment with a CF4/O-2 low-energy plasma, we obtain a clean Si surface in the patterned oxide windows for selective epitaxial growth, and the electrical characteristics are significantly improved. (C) 1995 American Institute of Physics.
EPITAXY OF SI1-XGEX BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4
(1995-07-15)
CHEN, LP
;
CHOU, TC
;
TSAI, WC
;
HUANG, GW
;
TSENG, HC
Disilane and germane were used to grow Si1-xGex epilayers at 550 degrees C by ultrahigh-vacuum chemical vapor deposition (UHVCVD). The solid composition x and growth rate of Si1-xGex were evaluated from double-crystal X-ray rocking curves and show very strong dependence on the total source gas flow rate ([GeH4]+[Si2H6]) and the gas ratio ([GeH4]/[GeH4]+[Si2H6]). The solid composition increases with increase of the gas ratio and also with increasing the total source flux by keeping gas ratio constant. The growth rate increases with the solid composition at lower values and then becomes saturated in the higher composition range (x>0.22). The results can be explained by the relationships of the source fluxes, relative incorporation efficiency at activated surface sites and hydrogen desorption under different growth conditions.
SOME EXACT RESULTS FOR THE DIFFUSION-COEFFICIENTS OF MAPS WITH PRUNING CYCLES
(1994-11-21)
TSENG, HC
;
CHEN, HJ
;
LI, PC
;
LAI, WY
;
CHOU, CH
For a family of piecewise linear maps, we consider several interesting cases in which the symbolic dynamics is described in terms of a restricted grammar. However, their diffusion coefficients can be determined analytically through appropriate cycle expansions.