Browsing by Author "TSENG Tseung-Yuen"

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METHOD FOR FABRICATING A RESISTOR FOR A RESISTANCE RANDOM ACCESS MEMORY
(2011-07-14)
TSENG Tseung-Yuen
;
Wang Sheng-Yu
;
Tsai Chen-Han
A method for fabricating a resistor for a resistance random access memory (RRAM) includes: (a) forming a first electrode over a substrate; (b) forming a variable resistance layer of zirconium oxide on the first electrode under a working temperature, which ranges from 175° C. to 225° C.; and (c) forming a second electrode of Ti on the variable resistance layer.