Browsing by Author "TU, YK"

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A NOVEL TECHNIQUE FOR LOW-THRESHOLD AND HIGH-POWER INGAAS/GAAS STRAINED-LAYER 0.98-MU-M BURIED HETEROSTRUCTURE LASER FABRICATION
(1992-02-01)
LIOU, DC
;
CHIANG, WH
;
LEE, CP
;
CHANG, KH
;
LIU, DG
A novel fabrication technique has been developed for InGaAs/GaAs strained-layer buried heterostructure lasers. Dielectric masks and Zn diffusion are not required in this technique. This novel fabrication process is much easier than the conventional approach and yields excellent laser results. A low threshold of 3 mA and high-power operation for lasing wavelength of 9800 +/- 20 angstrom have been achieved with graded index separate confinement heterostructure devices using this novel technique.
ROLE OF CLADDING LAYER THICKNESSES ON STRAINED-LAYER INGAAS/GAAS SINGLE AND MULTIPLE-QUANTUM-WELL LASERS
(1993-06-15)
LIU, DC
;
LEE, CP
;
TSAI, CM
;
LEI, TF
;
TSANG, JS
The influences of cladding layer thicknesses on the performance of strained-layer InGaAs/GaAs graded-index separated confinement heterostructure quantum well lasers have been studied. The waveguiding property of the laser structure was analyzed using the transfer matrix method. In this work, experimental results and the calculated results showed that threshold current densities and external quantum efficiencies both were crucially dependent on the thicknesses of cladding layer for both single and multiple quantum well lasers. The minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal total loss for both single and multiple quantum well devices were determined experimentally and theoretically.