Browsing by Author "Tai, Kuo-Lun"

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Atomic-Scale Fabrication of In-Plane Heterojunctions of Few-Layer MoS2 via In Situ Scanning Transmission Electron Microscopy
(1970-01-01)
Tai, Kuo-Lun
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Huang, Chun-Wei
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Cai, Ren-Fong
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Huang, Guan-Min
;
Tseng, Yi-Tang
Layered MoS2 is a prospective candidate for use in energy harvesting, valleytronics, and nanoelectronics. Its properties strongly related to its stacking configuration and the number of layers. Due to its atomically thin nature, understanding the atomic-level and structural modifications of 2D transition metal dichalcogenides is still underdeveloped, particularly the spatial control and selective precision. Therefore, the development of nanofabrication techniques is essential. Here, an atomic-scale approach used to sculpt 2D few-layer MoS2 into lateral heterojunctions via in situ scanning/transmission electron microscopy (STEM/TEM) is developed. The dynamic evolution is tracked using ultrafast and high-resolution filming equipment. The assembly behaviors inherent to few-layer 2D-materials are observed during the process and included the following: scrolling, folding, etching, and restructuring. Atomic resolution STEM is employed to identify the layer variation and stacking sequence for this new 2D-architecture. Subsequent energy-dispersive X-ray spectroscopy and electron energy loss spectroscopy analyses are performed to corroborate the elemental distribution. This sculpting technique that is established allows for the formation of sub-10 nm features, produces diverse nanostructures, and preserves the crystallinity of the material. The lateral heterointerfaces created in this study also pave the way for the design of quantum-relevant geometries, flexible optoelectronics, and energy storage devices.
Atomic-Scale Localized Thinning and Reconstruction of Two-Dimensional WS2 Layers through In Situ Transmission Electron Microscopy/Scanning Transmission Electron Microscopy
(2020-07-09)
Tseng, Yi-Tang
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Tai, Kuo-Lun
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Huang, Chun-Wei
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Huang, Chih-Yang
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Wu, Wen-Wei
Subnanometer nanofabrication has been investigated, and electron beam processing has been found to be a suitable strategy to control nanoparticle organization over large areas. Organized nanostructures have demonstrated their potential for technological applications. Here, we focus on the processing of tungsten disulfide (WS2) due to its novelty and promising electronic properties for further development of functional devices. First, we summarize the theory of electron beam irradiation by surveying the dynamic behaviors observed during in situ experiments. In particular, the diverse structures with various numbers of layers derived from localized thinning produce considerable lateral heterointerfaces. The generation of the intriguing tungsten-rich cluster is also consistent with the mechanism of our atomic engineering experiments. These findings suggest a method for the electron beam processing of 2D materials and demonstrate the viability of atomic engineering using electron irradiation.
Dynamic observation on the functional metal oxide conversion behaviors in Fe3O4/ZnO heterostructures
(2020-03-01)
Huang, Chih-Yang
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Tai, Kuo-Lun
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Huang, Chun-Wei
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Tseng, Yi-Tang
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Lo, Hung-Yang
We directly observed the atomic diffusion process of bilayered Fe/ZnO transforming into a Fe3O4/ZnO heterostructure. Significantly, we suggested a unique two-step route in which Fe diffused along [0001](znO) via boundaries of ZnO and then reacted along [(1) over bar2 (1) over bar0](ZnO). The specific orientation relationship of [0001(]ZnO)//[11 (1) over bar ]Fe3O4 could be precisely controlled. In addition, the formation of a ZnO/Fe3O4 heterostructure can be tuned in terms of reaction depth by controlling the annealing time. This study provided a novel nanofabricated method to produce oriented metal oxide heterostructures while visualizing the atomic mechanism of metal oxide formation, which allows for further investigation of promising devices. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Electron Beam Irradiation-Induced Deoxidation and Atomic Flattening on the Copper Surface
(2019-10-30)
Lin, Ting-Yi
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Lee, Shih-Kuang
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Huang, Guan-Min
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Huang, Chun-Wei
;
Tai, Kuo-Lun
Electron beam (e-beam) has been developed for nanomaterial observation and moreover to induce structural evolutions in atomic scale. In this work, we demonstrate the deoxidation of cuprous oxide (Cu2O) and the formation of an atomically flat surface on a Cu nanowire by e-beam irradiation. To develop e-beam irradiation applications, the relation between e-beam radiation and the atomic surface is significant. Through the density functional theory simulation of atomic sputtering, an obvious disparity in the sputtering threshold has been found under different structural conditions, which leads to different structural evolutions. Both surface deoxidation and atomic surface flattening reactions have been identified as self-limiting and irreversible processes via in situ transmission electron microscope observation. Under e-beam irradiation, the dynamic mechanism of atomic surface flattening is driven by the convergence of total surface energy and confirmed by climbing-image nudged elastic band (ci-NEB) calculations. With precise control, e-beam irradiation reveals enormous potentials in atomic surface engineering.
Observing phase transformation in CVD-grown MoS2 via atomic resolution TEM
(2018-09-14)
Tai, Kuo-Lun
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Huang, Guan-Min
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Huang, Chun-Wei
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Tsai, Tsung-Chun
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Lee, Shih-Kuang
We utilized in situ transmission electron microscopy to observe phase transformation in CVD-grown MoS2. Significantly, the reaction was performed under electron irradiation through appropriate control of the electron dose and exposure time. Moreover, we proposed a new route between the 2H and 1T phases that involved the higher energy states TS1/TS2.
Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAM
(2018-11-01)
Chang, Chia-Fu
;
Chen, Jui-Yuan
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Huang, Guan-Min
;
Lin, Ting-Yi
;
Tai, Kuo-Lun
In this work, we used the polycrystalline-Fe3O4 to improve the reliability of the Ag/Ta2O5/Pt resistive random access memory (RRAM). In both the Ag/Ta2O5/Fe3O4/Pt and Ag/Fe3O4/Ta2O5/Pt structures, the switching properties for these bilayer RRAMs were measured in atmosphere and vacuum environments. The results demonstrated that the humidity would affect the Ag filament formation in different environments, and the Ta2O5 and Fe3O4 interface in a different sequence would change the performance of the device, particularly the Forming voltage. Furthermore, the switching voltage and reliability of these bilayer RRAMs was better than single-layer RRAM device, which significantly increased endurance, especially in the Ag/Fe3O4/Ta2O5/Pt device. We also observed the conducting filament shape and evolution during Forming via in/ex-situ transmission electron microscopy (TEM) in the Ag/Fe3O4/Ta2O5/Pt system. In low humidity, the conducting filament was composed of many weak filaments in a low-resistance state (LRS), where the grain boundaries in the Fe3O4 layer limited filament size. The results of energy dispersive spectrometry (EDS) analysis demonstrated that the filament was composed of Ag metal. This study provided detailed switching knowledge of the bilayer RRAM for improving the reliability and power consumption of the device and new design viewpoints of the RRAM structure in future applications.