Browsing by Author "Tan, Ming-Hsuan"

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Embedded InN Dot-Like Structure within InGaN Layers Using Gradient-Indium Content in Nitride-Based Solar Cell
(2013)
Hsu, Lung-Hsing
;
Lin, Chien-Chung
;
Tan, Ming-Hsuan
;
Yeh, Yun-Ling
;
Lin, Da-Wei
The novel design of embedded InN dot-like structure within InGaN was useful as an absorption layer in photovoltaic (PV) cells. We constructed the simulation model by employing the commercial software APSYS (R) and integrating the absorption coefficient of thin InN materials fabricated by metal organic vapor deposition (MOCVD). The model of simulating gradient Indium content of InGaN used as transition interface between InN and GaN was investigated. The results exhibit utilizing the effective variation of Indium content and suitable thickness to approach the optimal characteristic of hybrid InN/InGaN structure within solar cells shall be anticipated to enhance the performance of current nitride-based solar cells.
Numerical study of a highly efficient solar cell with graded band gap design
(2015-05-01)
Tan, Ming-Hsuan
;
Tseng, Hung-Ruei
;
Kuo, Chien-Ting
;
Hsu, Shun-Chieh
;
Lo, Yen-Hua
A linearly graded band gap design in the intrinsic layer of a p-i-n solar cell is studied numerically. An ideal model using Matlab (R) is built and the device performance is calculated using continuity equations and an effective band gap model under various band gap combinations. The power conversion efficiency (PCE) can be as high as 30.21%, while the abrupt junction reference device only exhibits 29.25% under the same parameters. This design is also evaluated using the commercial TCAD software APSYS (R), and the calculations show optimal efficiency enhancements of about 1.14-fold that of the abrupt junction device in an AlAs/GaAs system and 2.05-fold that in an InGaN/GaN system. (C) 2015 The Japan Society of Applied Physics
Numerical Study of Graded Bandgap Solar Cells
(2013)
Tan, Ming-Hsuan
;
Tseng, Hung-Ruei
;
Lo, Yen-Hua
;
Hsu, Shun-Chieh
;
Tsai, Che-Pin
A novel idea of graded band gap design in intrinsic-layer is proposed and studied numerically. We built our device model by using Matlab (R) coding and commercial software APSYS (R). The device performance is calculated by continuity equations, and effective band gap model. The final calculation shows the optimal efficiency enhancement is about 1.32 and 2.18 times of the non-grading band gap device in GaAs and GaN system, respectively.
Numerical Study of Quantum-Dot-Embedded Solar Cells
(2013-09-01)
Lin, Chien-Chung
;
Tan, Ming-Hsuan
;
Tsai, Che-Pin
;
Chuang, Kuei-Ya
;
Lay, T. S.
A quantum-dot-embedded solar cell model with antireflection coating is proposed and studied numerically. The device model was designed by using MATLAB coding. A proper inclusion of quantum-dot-enhanced carrier absorption was achieved through a modified absorption coefficient and a structure dependent carrier lifetime. The transmission matrix and quasi-drift diffusion method were applied to simulate the optical and electrical characteristics of the device. The experimental results were fitted first to validate the model and provide parameters for optimization. The final simulation showed that the power conversion efficiency (PCE) of an ideal InGaP/GaAs+InAs QD dual-junction cell could achieve 39.04%.