Browsing by Author "Tan, Teng-Yang"

Now showing 1 - 3 of 3

A broadband and scalable lumped element model for fully symmetric inductors under single-ended and differentially driven operations
(2007-08-01)
Guo, Jyh-Chyurn
;
Tan, Teng-Yang
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A broadband and scalable 2-T model is developed to accurately simulate fully symmetric inductors with various dimensions. The 2-T model is defined to reflect the structure of an equivalent circuit with two identical T-model circuits. Two-step de-embedding is assisted by open and through pads for extraction of intrinsic characteristics. The accuracy is validated by 3-D fullwave electromagnetic simulation. A novel parameter extraction flow is established, and a single set of model parameters is derived to be valid for both single-ended and differentially driven topologies. The broadband accuracy is proven by a good match with S-parameters, L(omega), Re(Z(in)(omega)),and Q(omega) over frequencies up to 20 GHz. The scalability is justified by good fitting with either a linear or a parabolic function of spiral coil radii. Furthermore, all model parameters are frequency independent so as to ensure computation efficiency. This 2-T model consistently predicts the enhancement of Q(max) by 20%-30% for the symmetric inductors under a differential excitation. The Q improvement is even better than 100% over broader frequencies beyond f(m)(Q(max)).
A broadband and scalable on-chip inductor model appropriate for operation modes of varying substrate resistivities
(2007-11-01)
Guo, Jyh-Chyurn
;
Tan, Teng-Yang
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A broadband and scalable model is developed to accurately simulate on-chip inductors with various dimensions and substrate resistivities. The broadband accuracy is proven over frequencies of up to 20 GHz, even beyond resonance. A new scheme of resistance-inductance-capacitance networks is deployed for the spiral coils and substrate to account for 3-D eddy current, substrate return path, and spiral coil to substrate coupling effects. The 3-D eddy current is identified as the key element essential to accurately simulate the broadband characteristics. Electromagnetic simulation using the Advanced Design System momentum is conducted to predict the on-chip inductor performance corresponding to a wide range of substrate resistivities (rho(Si) = 0.05 - 1 k ohm center dot cm). Three operation modes such as transverse electromagnetic mode, slow-wave mode, and eddy current mode are reproduced. The model parameters manifest themselves as physics-based through relevant correlation with psi over three operation modes. The onset of slow-wave mode can be consistently explained by a key element R-p introduced in our model, which accounts for the conductor loss due to an eddy current arising from magnetic field coupling through a substrate return path. This broadband and scalable model is useful for radio frequency circuit simulation. In addition, it can facilitate an optimum design of on-chip inductors through the physics-based model parameters relevant to varying substrate resistivities.
A simple analytical model to accurately predict self-resonance frequencies of on-silicon-chip inductors in TEM mode and eddy current mode
(2008-08-01)
Guo, Jyh-Chyurn
;
Tan, Teng-Yang
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
For the first time, a simple analytical model in the form of explicit formulas was derived for on-silicon-chip inductors. This analytical model can accurately calculate self-resonance frequencies (f(SR)) in TEM mode and eddy current mode corresponding to very high and very low substrate resistivities (rho(Si)). Furthermore, this derived model can predict and explain the interesting result that f(SR) keeps nearly a constant independent of rho(Si) in TEM and eddy current modes but is critically determined by the inductance and parasitic capacitances. The simple model is useful in on-silicon-chip inductor design for increasing f(SR) under specified inductance target for broadband RF circuit design and applications. (C) 2008 Elsevier Ltd. All rights reserved.