Browsing by Author "Tang, C. J."

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Investigation of Post-NBT Stress Current Instability Modes in HfSiON Gate Dielectric pMOSFETs by Measurement of Individual Trapped Charge Emissions
(2009)
Ma, H. C.
;
Chiu, J. P.
;
Tang, C. J.
;
Wang, Tahui
;
Chang, C. S.
Bipolar charge detrapping induced current instability in HfSiON gate dielectric pMOSFETs after negative bias and temperature stress is studied by using a fast transient measurement technique. Both single electron and single hole emissions are observed, leading to post-stress current degradation and recovery, respectively. The NBT stress voltage and temperature effect on post-stress current evolution is explored. Clear evidence of electron and hole trapping in NBT stress is demonstrated. A bipolar charge trapping/detrapping model and charge detrapping paths based on measured charge emission times are proposed.