Browsing by Author "Tang, Wei"

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A Jitter Measurement Circuit Based On Dual Resolution Vernier Oscillator
(2009)
Tang, Wei
;
Feng, Jianhua
;
Lee, Chunglen
;
電機學院
;
College of Electrical and Computer Engineering
This paper presents a new on-chip jitter measurement circuit based on a dual vernier oscillator (VO) structure. The new structure measures the jitter with a low resolution VO first and then with a high resolution VO, thus greatly expanding the measurement range of the jitter and reducing the test time. The oscillators are implemented with differential digital controlled delay elements, whose oscillation periods can be precisely controlled The circuit has been implemented and verified with the SMIC 0.18 mu m technology and has been shown to have the ability of measuring jitters in the pico-second range.
Effect of Elastic Strain Fluctuation on Atomic Layer Growth of Epitaxial Silicide in Si Nanowires by Point Contact Reactions
(2015-06-01)
Chou, Yi-Chia
;
Tang, Wei
;
Chiou, Chien-Jyun
;
Chen, Kai
;
Minor, Andrew M.
Effects of strain impact a range of applications involving mobility change in field-effect-transistors. We report the effect of strain fluctuation on epitaxial growth of NiSi2 in a nanowire via point contact and atomic layer reactions, and we discuss the thermodynamic, kinetic, and mechanical implications. The generation and relaxation of strain shown by in situ TEM is periodic and in synchronization with the atomic layer reaction. The Si lattice at the epitaxial interface is under tensile strain, which enables a high solubility of supersaturated interstitial Ni atoms for homogeneous nucleation of an epitaxial atomic layer of the disilicide phase. The tensile strain is reduced locally during the incubation period of nucleation by the dissolution of supersaturated Ni atoms in the Si lattice but the strained-Si state returns once the atomic layer epitaxial growth of NiSi2 occurs by consuming the supersaturated Ni.