Browsing by Author "Tang, Yu-Hsiang"

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A Reversible Micro Mechanical-latch Shock Switch by External Magnetic Field
(2012)
Shieh, Yi-Chueh
;
Ma, Ruei-Pin
;
Hsu, Wensyang
;
Lin, Yu-Hsin
;
Tang, Yu-Hsiang
A reversible passive micro mechanical-latch shock switch made of nickel is designed, fabricated, and tested here. Unlike previous reversible mechanical-latch shock switches, which need built-in micro actuators to unlock the latch, the design proposed here utilizes external magnetic field to unlock the switch after experiencing impact over threshold level. Therefore, the switch is reusable and compact due to no built-in micro actuator.
The study of compensative structure assisted convex and concave corner structures etching by Inductively Coupled Plasma-Reactive Ion Etch (ICP-RIE)
(2015)
Lin, Yu-Hsin
;
Cheng, Yuan-Chieh
;
Chu, Nien-Nan
;
Hsu, Wensyang
;
Tang, Yu-Hsiang
In this paper, the compensative structure assisted the convex and concave corner structures etch in inductively coupled plasma reactive ion etch (ICP-RIE) have been studied. In anisotropic silicon etching, under the Bosch patent, sequentially alternating etch and passivation cycles can easily achieve high aspect ratio silicon structures. But, the feature size of the convex and concave corner structures are difficult to maintain as original design at the bottom position in deep etch, due to non-vertical movement plasma etch. A compensative structure can obstruct the non-vertical plasma to etch the convex corner structures and reduce the etch lag effect during the etch process leading to better profile at deep etch. The current study systematically investigates plasma condition to verify feasibility of the proposed method, and discusses effect of the gap between compensative structure and convex and concave corner structures at three different gaps of 15, 10, 5 mu m. It demonstrate the compensative structure with small gap in front of the convex and concave corner structures have better profile at deep ICP-RIE etching.
Transfer of a continuous-relief lenticular array onto a quartz substrate by using SIL combined with the dry-etching method
(2013-03-01)
Deng, Qing-Long
;
Chen, Chien-Yue
;
Lin, Wei-Li
;
Shew, Bor-Yuan
;
Chiang, Donyau
This study presents the technological process for producing a lenticular array on quartz. With scanning immersion lithography used to define the 3D lenticular array structure on a quartz substrate, inductively coupled plasma-reactive ion etching (ICP-RIE) is able to directly etch the structure. Based on the surface measurement, ICP-RIE can completely etch the surface structure onto the quartz substrate, and the surface roughness can reach 30 nm. Furthermore, after the optical measurement of stereoscopic images, the left and the right stereoscopic images can be successfully transmitted to the corresponding places without crosstalk and with a splitting efficiency close to 80%. As a result, this technology allows for the production of a lenticular structure with various changes on the quartz surface.