Browsing by Author "Tansu, Nelson"

Now showing 1 - 5 of 5

Hybrid organic-inorganic materials for novel photonic applications
(2013-08-01)
Banerjee, Partha P.
;
Evans, Dean R.
;
Lee, Wei
;
Reshetnyak, Victor Yu.
;
Tansu, Nelson
This novel joint feature issue on "Hybrid organic-inorganic materials for photonic applications" in Applied Optics and Optics Materials Express comprises 14 papers on liquid crystals, polymers, photoconductive materials, and gratings and filters. It is hoped that this feature issue encourages and stimulates further research into hybrid materials with enhanced linear and nonlinear optical properties, their mechanisms of operation, and their applications. (C) 2013 Optical Society of America
Hybrid organic-inorganic materials for photonic applications
(2013-08-01)
Banerjee, Partha P.
;
Evans, Dean R.
;
Lee, Wei
;
Reshetnyak, Victor Yu
;
Tansu, Nelson
This novel joint feature issue on "Hybrid organic-inorganic materials for photonic applications" in Applied Optics and Optics Materials Express comprises 14 papers on liquid crystals, polymers, photoconductive materials, and gratings and filters. It is hoped that this feature issue encourages and stimulates further research to into hybrid materials with enhanced linear and nonlinear optical properties, their mechanisms of operation, and their applications. (C) 2013 Optical Society of America
Introduction to the Issue on Solid-State Lighting
(2009-07-01)
Tansu, Nelson
;
Schubert, E. Fred
;
Kuo, Hao-Chung
;
Smowton, Peter M.
;
光電工程學系
Solid-State Lighting with High Brightness, High Efficiency, and Low Cost
(2014-01-01)
Horng, Ray-Hua
;
Lau, Kei May
;
Kuo, Hao-Chung
;
Tansu, Nelson
;
光電工程學系
Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells
(2008-04-21)
Hsu, Chih-Chang
;
Lin, Ja-Hon
;
Chen, Ying-Shu
;
Lin, Ying-Hsiu
;
Kuo, Hao-Chung
Striking differences in differential reflectance and carrier relaxation in In(0.4)Ga(0.6)As and In(0.4)Ga(0.6)As(0.98)N(0.02) single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 angstrom within 3000 angstrom wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier - carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in InGaAs but may be due to stimulated emission in InGaAsN. The results reveal that the carrier dynamics is strongly affected by N incorporation that causes local defects in InGaAsN SQWs to reduce the carrier relaxation.