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Browsing by Author "Tasi, CM"

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    AuBe Ohmic contacts to p-type ZnTe
    (1998-12-10)
    Lan, WH
    ;
    Lin, WJ
    ;
    Cheng, YC
    ;
    Tai, K
    ;
    Tasi, CM
    Ohmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0 x 10(-6) Ohm cm(2) for a p-doping level of 1.6 x 10(19) cm(-3) and at an annealing temperature of 200 degrees C. The beryllium is very effective at improving the electrical properties of p-type contacts to ZnTe.