Browsing by Author "Tian, Shiyang"

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Modeling the well-edge proximity effect in highly scaled MOSFETs
(2006-11-01)
Sheu, Yi-Ming
;
Su, Ke-Wei
;
Tian, Shiyang
;
Yang, Sheng-Jier
;
Wang, Chih-Chiang
The well-edge proximity effect caused by ion scattering during implantation in highly scaled CMOS technology is explored from a physics and process perspective. Technology computer-aided design (TCAD) simulations together with silicon wafer experiments have been conducted to investigate the impact of this effect. The ion scattering model and TCAD simulations provided a physical understanding of how the internal changes of the MOSFETs are formed. A new compact model for SPICE is proposed using physics-based understanding and has been calibrated using experimental silicon test sets.