Browsing by Author "Ting, JH"

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Film characterization and evaluation of process performance for the modified electron beam resist
(2000)
Ko, FH
;
Ting, JH
;
Chou, CT
;
Hsiao, LT
;
Huang, TY
The modification of the electron beam resist by spiking with various amounts of poly(styrene-co-maleic anhydride) copolymer is performed. The characterization of resist solutions by gel permeation chromatography (GPC) and viscosity measurement reveals the main polymer chain in the resist is unchangeable, irrespective of the amount of modification. In addition, the spiking copolymer exists in original form. The viscosity of the resist increases with the amount of spiking polymer. Our thermal analysis results show that the resists are mainly decomposed in two regions (280 and 544 degrees C). The mass loss at 280 degrees C is significant higher than at 544 degrees C. The spectra of Fourier transform infrared red (FTIR) spectrometer indicate the extent of carbonate group decomposition decreases with temperature for resists. The plasma etching experiment indicates the promotion of etching resistance of the resist film is due to modification, while the resolution, sensitivity and contrast are not degraded. Owing to the polymer aggregation effect, the stripping performance of the resist film can achieve better after copolymer modification.
RTE lag in diffractive optical element etching
(2000-12-01)
Ting, JH
;
Su, JC
;
Su, SY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this study, the pattern of a 4 mm diameter diffractive optical element with linewidth ranging from 12 to 0.5 mum was adopted. With the SiO2 layer as the etch hard mask, silicon was etched based on HBr chemistry with additions of O-2 and SF6 . The effects of O-2 content on the sidewall anisotropy, etch rate, and etch selectivity over the SiO2 mask were also examined. The RIE lag, where etching of a small trench (hole) lags behind a large trench (hole), was investigated to produce an optimum aspect ratio for each zone of the diffractive optical element. The regression relation of the etch depth versus zone width was determined as a guideline for the feasibility of this method. (C) 2000 Elsevier Science B.V. All rights reserved.