Browsing by Author "Tjeng, Liu Hao"

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Canted Antiferromagnetism on Rectangular Layers of Fe2+ in Polymorphic CaFeSeO
(2017-04-17)
Lai, Kwing To
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Komarek, Alexander Christoph
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Fernandez-Diaz, Maria Teresa
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Chang, Pi-Shan
;
Huh, Sungjoon
From stoichiometric amounts of CaO, Fe, and Se, pure powders and single crystals of quaternary Ca-infinity(2)[FeSe2/2O2/2] can be obtained by solid-state reaction and self-flux growth, respectively. The as-synthesized compound exhibits a polymorphic crystal structure, where the two modifications have different stacking sequences of (2)(infinity)[FeSe2/2O2/2](2-) layers. The two polymorphs have similar unit cells but different crystal symmetries (Cmc2(1), and Pnma), of which the former is non-centrosymmetric. Fe is divalent (d(6)) and high-spin, as proven by X-ray spectroscopy, Mossbauer spectroscopy, and powder neutron diffraction data. The latter two, in combination with magnetic susceptibility and specific heat data, reveal a long-range antiferromagnetic spin order (T-N = 160 K) with a minor spin canting. CaFeSeO is an electronic insulator, as confirmed by resistivity measurements and density functional theory calculations. The latter also suggest a relatively small energy difference between the two polymorphs, explaining their intimate intergrowth.
Deterministic optical control of room temperature multiferroicity in BiFeO3 thin films
(2019-06-01)
Liou, Yi-De
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Chiu, Yu-You
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Hart, Ryan Thomas
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Kuo, Chang-Yang
;
Huang, Yen-Lin
Controlling ferroic orders (ferroelectricity, ferromagnetism and ferroelasticity) by optical methods is a significant challenge due to the large mismatch in energy scales between the order parameter coupling strengths and the incident photons. Here, we demonstrate an approach to manipulate multiple ferroic orders in an epitaxial mixed-phase BiFeO3 thin film at ambient temperature via laser illumination. Phase-field simulations indicate that a light-driven flexoelectric effect allows the targeted formation of ordered domains. We also achieved precise sequential laser writing and erasure of different domain patterns, which demonstrates a deterministic optical control of multiferroicity at room temperature. As ferroic orders directly influence susceptibility and conductivity in complex materials, our results not only shed light on the optical control of multiple functionalities, but also suggest possible developments for optoelectronics and related applications.
Electrically enhanced magnetization in highly strained BiFeO3 films
(2016-05)
Yang, Jan-Chi
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Kuo, Chang-Yang
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Liu, Heng-Jui
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Ding, Hang-Chen
;
Duan, Chun-Gang
The control of magnetism via an electric field has attracted substantial attention because of potential applications in magnetoelectronics, spintronics and high-frequency devices. In this study, we demonstrate a new approach to enhance and control the magnetization of multiferroic thin film by an electric stimulus. First, to reduce the strength of the antiferromagnetic superexchange interaction in BiFeO3, we applied strain engineering to stabilize a highly strained phase. Second, the direction of the ferroelectric polarization was controlled by an electric field to enhance the Dzyaloshinskii-Moriya interaction in the highly strained BiFeO3 phase. Because of the magnetoelectric coupling in BiFeO3, a strong correlation between the modulated ferroelectricity and enhanced magnetization was observed. The tunability of this strong correlation by an electric field provides an intriguing route to control ferromagnetism in a single-phase multiferroic.
Heteroepitaxy of Fe3O4/Muscovite: A New Perspective for Flexible Spintronics
(2016-12-14)
Wu, Ping-Chun
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Chen, Ping-Fan
;
Thi Hien Do
;
Hsieh, Ying-Hui
;
Ma, Chun-Hao
Spintronics has captured a lot of attention since it was proposed. It has been triggering numerous research groups to make their efforts on pursuing spin-related electronic devices. Recently, flexible and wearable devices are in a high demand due to their outstanding potential in practical applications. In order to introduce spintronics into the realm of flexible devices, we demonstrate that it is feasible to grow epitaxial Fe3O4 film, a promising candidate for realizing spintronic devices based on tunneling magnetoresistance, on flexible muscovite. In this study, the heteroepitaxy of Fe3O4/muscovite is characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. The chemical composition and magnetic feature are investigated by a combination of X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. The electrical and magnetic properties are examined to show the preservation of the primitive properties of Fe3O4. Furthermore, various bending tests are performed to show the tunability of functionalities and to confirm that the heterostructures retain the physical properties under repeated cycles. These results illustrate that the Fe3O4/muscovite heterostructure can be a potential candidate for the applications in flexible spintronics.
Intermediate-Valence Ytterbium Compound Yb4Ga24Pt9: Synthesis, Crystal Structure, and Physical Properties
(2017-08-07)
Sichevych, Olga
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Prots, Yurii
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Utsumi, Yuki
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Akselrud, Lev
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Schmidt, Marcus
The title compound was synthesized by a reaction of the elemental educts in a corundum crucible at 1200 degrees C under an Ar atmosphere. The excess of Ga used in the initial mixture served as a flux for the subsequent crystal growth at 600 degrees C. The crystal structure of Yb4Ga24Pt9 was determined from single-crystal X-ray diffraction data: new prototype of crystal structure, space group C2/m, Pearson symbol mS74, a = 7.4809(1) angstrom, b = 12.9546(2) angstrom, c = 13.2479(2) angstrom, beta = 100.879(1)degrees, V = 1260.82(6) angstrom(3), R-F = 0.039 for 1781 observed reflections and 107 variable parameters. The structure is described as an ABABB stacking of two slabs with trigonal symmetry and compositions Yb4Ga6 (A) and Ga12Pt6 (B). The hard. X-ray photoelectron spectrum (HAXPES) of Yb4Ga24Pt9 shows both Yb2+ and Yb3+ contributions as evidence of an intermediate valence state of ytterbium The evaluated Yb valence of similar to 2.5 is in good agreement with the results obtained from the magnetic susceptibility measurements. The compound is, a bad metallic conductor.
Synthesis and Characterization of Ba[CoSO]: Magnetic Complexity in the Presence of Chalcogen Ordering
(2015-07-20)
Valldor, Martin
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Roessler, Ulrich K.
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Prots, Yurii
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Kuo, Chang-Yang
;
Chiang, Jen-Che
Barium thio-oxocobaltate(II), Ba[CoS2/2O2/2], was synthesized by the reaction of equimolar amounts of BaO, Co, and S in closed silica ampoules. The title compound (Cmcm, a=3.98808(3), b=12.75518(9), c=6.10697(4)angstrom) is isostructural to Ba[ZnSO]. The use of soft X-ray absorption spectroscopy confirmed that cobalt is in the oxidation state +2 and tetrahedrally coordinated. Its coordination consists of two sulfur and two oxygen atoms in an ordered fashion. High-temperature magnetic susceptibility data indicate strong low-dimensional spin-spin interactions, which are suggested to be closely related to the layer-type crystal structure and perhaps the ordered distribution of sulfur and oxygen. Antiferromagnetic ordering below T-N=222K is observed as an anomaly in the specific heat, coinciding with a significant lowering of the magnetic susceptibility. Density functional theory calculations within a generalized-gradient approximation (GGA)+U approach identify an antiferromagnetic ground state within the square-like two-dimensional layers of Co, and antiferromagnetic correlations for nearest and next nearest neighbors along bonds mediated by oxygen or sulfur. However, this magnetic state is subject to frustration by relatively strong interlayer couplings.