Browsing by Author "Tran, Binh-Tinh"

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Characterization of Al2O3/ZnO Grown on Si Substrate by Plasma Enhanced Atomic Layer Deposition
(2013-01-01)
Chung, Chen-Chen
;
Tran, Binh-Tinh
;
Lin, Kung-Liang
;
Wang, Ching-Chiun
;
Chen, Chien-Chih
Characterization of nanolaminate Al2O3/ZnO oxide films grown on Si substrates was conducted by using plasma enhanced atomic layer deposition (PE-ALD) method. PE-ALD can minimize the structural imperfections in films and reduce substrate damage. The film deposition by using PE-ALD are dense, defect-free, highly uniform, conformal films and show excellent step coverage. Moreover, compared to other deposition techniques, it is possible to deposit high quality films at much lower temperatures. High resolution transmission electron microscope (TEM) images showed the existence of sharp interfacial layers among the Al2O3, ZnO layer, and the Si substrate for the growth rate of 1.56 angstrom/cycle, and the surface roughness of about 0.2 nm. The nanolaminate-stacking layer can be used in organic light emitting diode encapsulation application as the gas barrier.
Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al(2)O(3) on InAs
(2010-11-01)
Trinh, Hai-Dang
;
Chang, Edward Yi
;
Wong, Yuen-Yee
;
Yu, Chih-Chieh
;
Chang, Chia-Yuan
The reduction of native oxides on an In As surface using various wet and dry chemical treatments including hydrochloric acid (HCl) treatment sulfide treatment and in situ trimethyl aluminum (TMA) treatment before the atomic layer deposition (ALD) of Al(2)O(3) on In As is studied X ray photoelectron spectrum (XPS) results show that the effect of surface cleaning by TMA was apparent almost after the first pulse but that TMA cleaning is not as effective as wet chemical surface cleaning The combination of wet chemical treatment and TMA pretreatment is the most effective method for In As surface cleaning as indicated by the XPS analysis Capacitance-voltage (C-V) and current density-voltage (J-V) characteristics on metal-oxide-semiconductor capacitance (MOSCAP) structures were also investigated to evaluate the Al(2)O(3)/n In As interface quality after different surface treatments and the results are consistent with the XPS analysis (C) 2010 The Japan Society of Applied Physics
Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs
(2010-11-01)
Trinh, Hai-Dang
;
Chang, Edward Yi
;
Wong, Yuen-Yee
;
Yu, Chih-Chieh
;
Chang, Chia-Yuan
The reduction of native oxides on an In As surface using various wet and dry chemical treatments including hydrochloric acid (HCl) treatment sulfide treatment and in situ trimethyl aluminum (TMA) treatment before the atomic layer deposition (ALD) of Al2O3 on In As is studied X ray photoelectron spectrum (XPS) results show that the effect of surface cleaning by TMA was apparent almost after the first pulse but that TMA cleaning is not as effective as wet chemical surface cleaning The combination of wet chemical treatment and TMA pretreatment is the most effective method for In As surface cleaning as indicated by the XPS analysis Capacitance-voltage (C-V) and current density-voltage (J-V) characteristics on metal-oxide-semiconductor capacitance (MOSCAP) structures were also investigated to evaluate the Al2O3/n In As interface quality after different surface treatments and the results are consistent with the XPS analysis (C) 2010 The Japan Society of Applied Physics
Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell
(2012-07-01)
Tran, Binh-Tinh
;
Chang, Edward-Yi
;
Trinh, Hai-Dang
;
Lee, Ching-Ting
;
Sahoo, Kartika Chandra
Electro-optic characteristics of a fabricated n-In0.4Ga0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V-oc) of 1.52 V and a short-circuit current density (J(sc)) of 8.68 mA/cm(2) with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V-oc and In content in the InxGa1-xN alloys for this type of solar cell was also derived. (C) 2012 Elsevier B.V. All rights reserved.