Browsing by Author "Tretyak, OV"

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Deep level transient spectroscopy characterization of InAs self-assembled quantum dots
(2001-01-15)
Ilchenko, VV
;
Lin, SD
;
Lee, CP
;
Tretyak, OV
;
電子工程學系及電子研究所
Deep level transient spectroscopy (DLTS) was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots. (C) 2001 American Institute of Physics.
DLTS characterization of InAs self-assembled quantum dots
(2000)
Ilchenko, VV
;
Lin, SD
;
Lee, CP
;
Tretyak, OV
;
交大名義發表
Deep level capacitance transient spectroscopy was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots.