Browsing by Author "Tsai, CT"

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A new insight into the degradation mechanisms of various mobility-enhanced CMOS devices with different substrate engineering
(2005)
Chung, SS
;
Liu, YR
;
Wu, SJ
;
Lai, CS
;
Liu, YC
In this paper, the difference in degradation mechanism for different substrate engineered CMOS devices has been reported for the first time. These two different substrate engineering includes hybrid substrate engineering, with (100) and (110) orientations, and strained-Si devices. Different mechanisms are responsible for these two different mobility enhancement schemes. For strained-Si devices, it shows that the dominant mechanism for HC(Hot Carrier) and NBT (Negative Bias Temperature) degradations is attributed to the lateral electric field resulting from the mobility enhancement. While for (110)/(100) substrate engineered devices, the dominant mechanism is due to the dangling bond of the surface. In other words, for (I I 0)/(l 00) substrate, the device degradation is weakly dependent on the mobility enhancement while largely dependent on the bond strength. Finally, the difference in temperature dependence of HC and NBT has also been observed for both strained-Si and (110)/(100) substrate devices. Sophisticated measurement techniques, charge pumping (CP) and gated-diode (GD) measurement, have been employed to understand these device mechanisms. These results provide a guideline for the device design and the understanding of related reliabilities in the popular strained-Si and hybrid substrate technology CMOS devices.
A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices
(2005)
Chung, SS
;
Liu, YR
;
Yeh, CF
;
Wu, SR
;
Lai, CS
In this paper, the evidence of SiGe layer induced trap generation and its correlation with enhanced degradation in strained-Si/SiGe CMOS devices have been reported for the first time. First, a new two-level charge pumping(CP) curve has been demonstrated to identify the Ge out-diffusion effect. Secondly, enhanced degradation in strained-Si devices has been clarified based on experimental results. Both n- and p-MOSFE's exhibit different extent of HC degradation effect. This is attributed to the difference in their mobility enhancement as well as additional traps coming from the Si/SiGe interface. Finally, temperature dependence of HC and NBTI has been examined for both strained-Si and bulk devices. Sophisticated measurement techniques, charge pumping and gated-diode (GD) measurements, have been employed to understand the generated interface traps. Results show that strained-Si device is less sensitive to the temperature and has a chance for better NBTI reliability if we have a good control of the strained-Si/SiGe interface, such as through low temperature gate oxide process or better S/D junction formation.
A real time collaboration system for teleradiology consultation
(2003-12-01)
Lee, JS
;
Tsai, CT
;
Pen, CH
;
Lu, HC
;
資訊工程學系
Real time collaboration systems, in which participants share multimedia data and applications in real time, have attracted many researchers in recent years. A teleradiology consultation system based on the real time collaboration technology is presented in this paper. Under the platform-independence consideration, Java technologies are employed to construct the system. Applying this system, an off-duty on-call radiologist can make diagnoses and report easily by viewing the transferred images at home. Owing to the accessibility of image, all users can examine and manipulate images consistently such that a secluded hospital can be assisted to hold remote consultation. To reduce the network transmission time, the command-passing and local command execution techniques are utilized to achieve the screen synchronization. A pointer function is also developed to maintain the cursor consistency in a more efficient manner during consultation when a detail indication of the examined image is needed. Besides, a dialog window is also designed for on-line conversation. Since Java programs can run on heterogeneous platforms, the need for system maintenance and user training can be substantially reduced. (C) 2003 Elsevier Ireland All rights reserved.
A stage approach for industrial technology development and implementation - the case of Taiwan's computer industry
(1999-04-01)
Chang, PL
;
Hsu, CW
;
Tsai, CT
;
管理科學系
;
Department of Management Science
The objective of this paper is to study how government-supported R&D institutes cooperate with the industrial sector to assist industrial technology development in developing countries. By investigating the case of the computer industry in Taiwan, the authors suggest a stage approach for industrial technology development. This approach emphasizes the implementation of technology, that is, R&D institutes should help industry to truly absorb and apply technology to improve their products or services to upgrade their overall industrial competitiveness. For developing countries, the key problems of industrial technology development are not only gaining technology but also implementing that technology in their own industrial context, This paper suggests that R&D institutes should closely coordinate with industry during the R&D procedures to make different technology implementation strategies at different developmental stages. The approach is based on three stages which respectively represent industrial technology capabilities at weak, medium or strong levels. Five strategies are discussed. To link the implementation strategies and the R&D procedures there are three critical factors to consider: commercialization capability; market timing; and industrial technology requirements. This approach shows how R&D institutes can effectively help industrial technology to develop step-by-step, thus upgrading technological capability and fostering overall industrial growth. (C) 1999 Elsevier Science Ltd. All rights reserved.
Activation of carbon nanotube emitters by using supercritical carbon dioxide fluids with propyl alcohol
(2006)
Liu, PT
;
Tsai, CT
;
Chang, TC
;
Kin, KT
;
Chang, PL
This paper explores the application of supercritical carbon dioxide fluids on the field emission enhancement for vertically aligned carbon nanotubes. The typical heating process cannot effectively activate the deionized-water-rinsed carbon nanotube emitters, exhibiting poorer field emission performance, due to residual moisture uptake in the carbon nanotubes. In contrast, the field emission enhancement can be achieved significantly by applying the supercritical carbon dioxide fluids associated with 3 to 9 vol % propyl alcohol. It is found the cosolvent propyl alcohol plays a critical role in the activation efficiency of supercritical carbon dioxide fluids. A physical model is also deduced to clarify the observation. (c) 2006 The Electrochemical Society.
Effect of lateral substituent on the mesomorphic properties of ferroelectric side-chain liquid crystalline polysiloxanes.
(1996-08-25)
Hsu, CS
;
Tsai, CT
;
應用化學系
;
Department of Applied Chemistry
Effect of lateral substituent on the mesomorphic properties of ferroelectric side-chain liquid crystalline polysiloxanes.
(1996-08-25)
Hsu, CS
;
Tsai, CT
;
應用化學系
;
Department of Applied Chemistry
Fabrication and physical properties of radio frequency sputtered Cd1-xMnxS thin films
(1996-10-15)
Tsai, CT
;
Chen, SH
;
Chuu, DS
;
Chou, WC
;
電子物理學系
Highly oriented Cd1-xMnxS thin films with a wurtzite structure were grown by the radio-frequency sputtering technique. The grain size of the Cd1-xMnxS thin films was found to decrease with an increase in the Mn concentration x. Moreover, the lattice softening effect due to the quantum size effect, the band-bowing phenomena accounted for by the band-gap correction arising from the chemical disorder, and the exchange interaction between the band carrier and the d electron of the magnetic Mn ions have been investigated.
Fabrication and physical properties of radio frequency sputtered Cd1-xMnxS thin films
(1996-10-15)
Tsai, CT
;
Chen, SH
;
Chuu, DS
;
Chou, WC
;
電子物理學系
Highly oriented Cd1-xMnxS thin films with a wurtzite structure were grown by the radio-frequency sputtering technique. The grain size of the Cd1-xMnxS thin films was found to decrease with an increase in the Mn concentration x. Moreover, the lattice softening effect due to the quantum size effect, the band-bowing phenomena accounted for by the band-gap correction arising from the chemical disorder, and the exchange interaction between the band carrier and the d electron of the magnetic Mn ions have been investigated.
Fabrication and physical properties of radio frequency sputtered ZnMnSe thin films
(1997-07-01)
Tsai, CT
;
Chuu, DS
;
Leou, JY
;
Chou, WC
;
電子物理學系
Zn1-xMnxSe thin films with various Mn concentrations were produced by the radio frequency sputtering technique. As the Mn concentration increased, it was found that two types of crystal structures (zinc blende and wurtzite) compete with each other. The grain size of the Zn1-xMnx Se thin films decreased as Mn concentration x was increased. Moreover, the zone-center optical phonons of Zn1-xMnxSe thin films exhibit an intermediate mode behavior which is consistent with that of the bulk crystals.
Finding the niche position - competition strategy of Taiwan's IC design industry
(2002-02-01)
Chang, PL
;
Tsai, CT
;
經營管理研究所
;
Institute of Business and Management
The total revenue of Taiwan's IC design industry is now the second in the world. only behind the United States. Despite the disadvantages of limited research resources and little influence over the global electronics market, it was able to build up a core competence of speed, quality, flexibility and cost through knowledge assimilation and utilization. Taiwan did not attempt to challenge the technology leadership in a confrontational manner. but focused on being a superior quick follower. The implementation of this niche strategy and the core competence of the IC design industry originates front five major factors: supportive policy, technology manpower, entrepreneurship, vertical disintegration and industrial cluster. This paper is dedicated to discussing this unique strategy and the supporting factors of Taiwan's IC design industry. (C) 2001 Elsevier Science Ltd. All rights reserved.
Fused-ring and linking group effects of proton donors and accepters on simple H-bonded liquid crystals
(2000-08-01)
Lin, HC
;
Shiaws, JM
;
Wu, CY
;
Tsai, CT
;
材料科學與工程學系
Two fused-ring structures, 6-decyloxy-2-naphthoic acid C(10)ONA (3) and 6-dodecyloxy-isoquinoline IS (8), were synthesized and utilized as proton donor and acceptor moieties to construct a series of simple mesogenic supramolecules. The other complementary hydrogen-bonded (H-bonded) moieties are benzoic acids, thiophenecarboxylic acid and pyridines containing different alkyl chain lengths connected by ether and ester linkages, i.e. 4-alkoxybenzoic acid C(n)OBA (1), terephthalic acid monoalkyl ester C(n)COOBA (2), 2,5-thiophenedicarboxylic acid monodecyl ester C(10)COOTHA (4), 4-alkoxypyridine CnOP (6) and isonicotinic acid alkyl ester CnCOOP (7). Several series of simple mesogenic supramolecular dimers were constructed from 1:1 molar ratios of proton donors (C(n)OBA, C(n)COOBA, C(10)ONA and C(10)COOTHA) and proton accepters (IS, CnOP and CnCOOP), though the proton acceptor CnCOOP induced phase separation in all complexes. In order to investigate their fused-ring and linking group effects on the mesogenic properties of the H-bonded complexes, analogous simple supramolecular structures are compared. Supramolecular architecture and the distinct mesomorphism of these simple H-bonded liquid crystalline materials were confirmed by polarizing optical microscopy, DSC and powder X-ray diffraction experiments.
Growth and characterization of Cd1-x-yZnxMnyTe crystals
(1996-12-01)
Chou, WC
;
Chen, FR
;
Chiang, TY
;
Shin, HY
;
Sun, CY
The Cd1-x-yZnxMnyTe crystals, having potential in the development of magnetic field sensitive devices, were grown by the temperature gradient solution method at 940 degrees C. All crystals were p-type with resistivity of 10(7) Omega . cm. They have novel magneto-optical properties, and could be substitutes for the Cd1-xZnxTe ternary compounds in certain optoelectronic/integrated-optical device applications.
Growth and characterization of Cd1-x-yZnxMnyTe crystals
(1996-12-01)
Chou, WC
;
Chen, FR
;
Chiang, TY
;
Shin, HY
;
Sun, CY
The Cd1-x-yZnxMnyTe crystals, having potential in the development of magnetic field sensitive devices, were grown by the temperature gradient solution method at 940 degrees C. All crystals were p-type with resistivity of 10(7) Omega . cm. They have novel magneto-optical properties, and could be substitutes for the Cd1-xZnxTe ternary compounds in certain optoelectronic/integrated-optical device applications.
H-bonded effects on supramolecular liquid crystalline trimers containing photoluminescent cores
(2001)
Lin, HC
;
Sheu, HY
;
Chang, CL
;
Tsai, CT
;
材料科學與工程學系
Several series of hydrogen-bonded (H-bonded) liquid crystalline trimers are constructed by complexation of two complementary components containing various bifunctional photoluminescent (PL) acceptor cores and monofunctional proton donors (in a 1 : 2 molar ratio). These supramolecular liquid crystalline trimers (i.e. H-bonded trimers 1/3, 1/4, 1/5, 1/6, 2/3, 2/4, 2/5 and 2/6) are, respectively, obtained from bifunctional bis-pyridyl acceptors (containing conjugated benzene and thiophene centers) (1 and 2) complexed with monofunctional carboxylic acids (containing benzene, thiophene or naphthalene) (3-6) in a 1 : 2 acceptor-donor group stoichiometry. Though the PL bis-pyridyl acceptors (1 and 2) do not possess any mesophases, the distinct mesomorphism and supramolecular architecture of these H-bonded trimers are confirmed by polarizing optical microscopy (POM), DSC, and powder X-ray diffraction (XRD) experiments. Moreover, the PL properties of the photoluminescent bis-pyridyl cores can be adjusted not only by the central structures of the cores but also by their surrounding non-photoluminescent proton donors. In general, redder shifts occur in PL spectra of H-bonded trimers when proton donors of smaller pK(a) values are H-bonded to the photoluminescent cores. Significantly, different wavelengths and polarized light of PL emission can be obtained in these supramolecular structures possessing both liquid crstalline and photoluminescent properties.
Studies of grain size effects in rf sputtered CdS thin films
(1996-06-15)
Tsai, CT
;
Chuu, DS
;
Chen, GL
;
Yang, SL
;
電子物理學系
CdS thin films with various grain sizes were produced by rf sputtering and in situ postannealing processes. For a series of annealing time intervals, the average grain sizes of an as-deposited thin film with thickness similar to 4000 Angstrom were found to vary from similar to 280 to similar to 1500 Angstrom. Three bands located in the green, yellow, and red regions were observed in photoluminescence (PL) spectra of these as-deposited films. The temperature dependence of (PL) spectra of CdS microcrystals was investigated. The variations of the (PL) spectra with average grain size and thickness of CdS thin films were also studied. It was found that the intensity of the yellow band was increased as increasing the film thickness while the intensity of the red band was decreased as the grain size of the film became larger. The peak positions of the yellow and red bands were found to be blue-shifted as the films became thinner. (C) 1996 American Institute of Physics.
Studies of grain size effects in rf sputtered CdS thin films
(1996-06-15)
Tsai, CT
;
Chuu, DS
;
Chen, GL
;
Yang, SL
;
電子物理學系
CdS thin films with various grain sizes were produced by rf sputtering and in situ postannealing processes. For a series of annealing time intervals, the average grain sizes of an as-deposited thin film with thickness similar to 4000 Angstrom were found to vary from similar to 280 to similar to 1500 Angstrom. Three bands located in the green, yellow, and red regions were observed in photoluminescence (PL) spectra of these as-deposited films. The temperature dependence of (PL) spectra of CdS microcrystals was investigated. The variations of the (PL) spectra with average grain size and thickness of CdS thin films were also studied. It was found that the intensity of the yellow band was increased as increasing the film thickness while the intensity of the red band was decreased as the grain size of the film became larger. The peak positions of the yellow and red bands were found to be blue-shifted as the films became thinner. (C) 1996 American Institute of Physics.