Browsing by Author "Tsai, Chen-Han"

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Design of Wearable Breathing Sound Monitoring System for Real-Time Wheeze Detection
(2017-01-01)
Li, Shih-Hong
;
Lin, Bor-Shing
;
Tsai, Chen-Han
;
Yang, Cheng-Ta
;
Lin, Bor-Shyh
In the clinic, the wheezing sound is usually considered as an indicator symptom to reflect the degree of airway obstruction. The auscultation approach is the most common way to diagnose wheezing sounds, but it subjectively depends on the experience of the physician. Several previous studies attempted to extract the features of breathing sounds to detect wheezing sounds automatically. However, there is still a lack of suitable monitoring systems for real-time wheeze detection in daily life. In this study, a wearable and wireless breathing sound monitoring system for real-time wheeze detection was proposed. Moreover, a breathing sounds analysis algorithm was designed to continuously extract and analyze the features of breathing sounds to provide the objectively quantitative information of breathing sounds to professional physicians. Here, normalized spectral integration (NSI) was also designed and applied in wheeze detection. The proposed algorithm required only short-term data of breathing sounds and lower computational complexity to perform real-time wheeze detection, and is suitable to be implemented in a commercial portable device, which contains relatively low computing power and memory. From the experimental results, the proposed system could provide good performance on wheeze detection exactly and might be a useful assisting tool for analysis of breathing sounds in clinical diagnosis.
Improved resistive switching properties of Ti/ZrO(2)/Pt memory devices for RRAM application
(2011-07-01)
Wang, Sheng-Yu
;
Tsai, Chen-Han
;
Lee, Dai-Ying
;
Lin, Chih-Yang
;
Lin, Chun-Chieh
In this study, we have investigated the effect of current compliance during forming process on resistive switching (RS) characteristics of the Ti/ZrO(2)/Pt device. The higher the current compliance is, the larger RS operation voltage is needed. The Ti/ZrO(2)/Pt device with high device yield can be operated over 10,000 RS cycles by sweeping dc voltage. and the on and off two memory states exhibit good stability under 0.3 V stress voltage. Moreover, the data retention of both memory states is over 10(5) s. As applying +6-V 10-ns and -3-V 10-ns voltage pulses on the device, there are operation errors observed during continuous write-read-erase-read cycles until increasing the pulse width to 50 ns. Nondestructive readout tests are also performed on the Ti/ZrO(2)/Pt device before and after 10(3) pulse cycles without any obvious degradation observed. Compared with reported ZrO(2)-based memory devices, our Ti/ZrO(2)/Pt device exhibits better RS properties and has a high potential for memory application. (C) 2011 Elsevier B.V. All rights reserved.
Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application
(2011-07-01)
Wang, Sheng-Yu
;
Tsai, Chen-Han
;
Lee, Dai-Ying
;
Lin, Chih-Yang
;
Lin, Chun-Chieh
In this study, we have investigated the effect of current compliance during forming process on resistive switching (RS) characteristics of the Ti/ZrO2/Pt device. The higher the current compliance is, the larger RS operation voltage is needed. The Ti/ZrO2/Pt device with high device yield can be operated over 10,000 RS cycles by sweeping dc voltage. and the on and off two memory states exhibit good stability under 0.3 V stress voltage. Moreover, the data retention of both memory states is over 10(5) s. As applying +6-V 10-ns and -3-V 10-ns voltage pulses on the device, there are operation errors observed during continuous write-read-erase-read cycles until increasing the pulse width to 50 ns. Nondestructive readout tests are also performed on the Ti/ZrO2/Pt device before and after 10(3) pulse cycles without any obvious degradation observed. Compared with reported ZrO2-based memory devices, our Ti/ZrO2/Pt device exhibits better RS properties and has a high potential for memory application. (C) 2011 Elsevier B.V. All rights reserved.