Browsing by Author "Tsai, Chi-Chung"

Now showing 1 - 7 of 7

A Color Break-Up Suppression Method, Stencil-FSC Method, for Field-Sequential-Color(FSC) LCDs with low Power Consumption
(2008)
Huang, Yi-Pai
;
Lin, Fang-Cheng
;
Wei, Ching-Ming
;
Shieh, Han-Ping D.
;
Tsai, Chi-Chung
Field sequential color liquid crystal display (FSC-LCDs) is a display without color filter, so it achieves several attractive advantages. However, it has a serious issue called color breakup (CBU), which degrades image quality and causes viewers uncomfortable. Consequently, the "Stencil-FSC" method, which utilized multi-color image in a single field, was proposed to suppress CBU. Moreover, optimizations of hardware parameters were done to get the optimal CBU suppression. Finally, the Stencil-FSC method was successfully demonstrated on a 32-inch FSC-LCD with effectively suppressed CBU, resulting contrast ratio of more than 5,500:1, and average power consumption of less than 45 Watt.
An Auto-Stereoscopic 3D Display Using Tunable Liquid Crystal Lens Array that Mimics Effects of GRIN Lenticular Lens Array
(2009)
Kao, Yung-Yuan
;
Huang, Yan-Pean
;
Yang, Kai-Xian
;
Chao, Paul C. -P.
;
Tsai, Chi-Chung
A tunable liquid crystal lenticular lens array is proposed to compose an auto-stereoscopic 3D display. The focusing can be achieved based on non-uniform phase retardation across the width of the LC lenticular lens, mimicking the effects of gradient index (GRIN) lens. The viewing distance and zones of this display can be adjusted in an on-line fashion to track the viewer position relative to the display. The proposed scheme can present the lenticular lens and the LC GRIN lens simultaneously, so that the simulation results can express the low value of crosstalk of 9% by the lenticular lens array and the LC GRIN lens array.
High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer
(2016-04)
Yen, Shiang-Shiou
;
Cheng, Chun-Hu
;
Lan, Yu-Pin
;
Chiu, Yu-Chien
;
Fan, Chia-Chi
High electrostatic discharge (ESD) protection robustness and good transient-induced latchup immunity are two important issues for high voltage integrate circuit application. In this study, we report a high-voltage-n-type-field (HVNF) implantation to act as the body ties blocking layer in segmented topology silicon-controlled-rectifier (SCR) structure in 0.11 mu m 32 V high voltage process. This body ties blocking layer eliminate the elevated triggered voltage in segmented technique. Using a large resistance as shunt resistor in resistor assisted triggered SCRs stacking structure, the double snapback phenomenon is eliminate. The series SCR could be decoupled a sufficient voltage drop to turned-on when a very low current flow through the shunt resistor. The holding voltage and the failure current of 22 V and 3.4 A are achieved in the best condition of segmented topology SCR stacking structure, respectively. It improves the latchup immunity at high voltage ICs application. On the other hand, the triggered voltage almost keep the same value which is identical to SCR single cell without using segmented topology. (C) 2016 The Japan Society of Applied Physics
High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer
(2016-04-01)
Yen, Shiang-Shiou
;
Cheng, Chun-Hu
;
Lan, Yu-Pin
;
Chiu, Yu-Chien
;
Fan, Chia-Chi
High electrostatic discharge (ESD) protection robustness and good transient-induced latchup immunity are two important issues for high voltage integrate circuit application. In this study, we report a high-voltage-n-type-field (HVNF) implantation to act as the body ties blocking layer in segmented topology silicon-controlled-rectifier (SCR) structure in 0.11 mu m 32 V high voltage process. This body ties blocking layer eliminate the elevated triggered voltage in segmented technique. Using a large resistance as shunt resistor in resistor assisted triggered SCRs stacking structure, the double snapback phenomenon is eliminate. The series SCR could be decoupled a sufficient voltage drop to turned-on when a very low current flow through the shunt resistor. The holding voltage and the failure current of 22 V and 3.4 A are achieved in the best condition of segmented topology SCR stacking structure, respectively. It improves the latchup immunity at high voltage ICs application. On the other hand, the triggered voltage almost keep the same value which is identical to SCR single cell without using segmented topology. (C) 2016 The Japan Society of Applied Physics
Low Cost All-Dielectric Thin-Film Solar Cell Using Diffuse Medium Reflectors
(2014)
Tseng, Chi Wei
;
Fu, Sze Ming
;
Lai, Shih-Yun
;
Lai, Wei-Ming
;
Yan, Sheng Lun
Diffuse reflectors can be beneficial for solar cells, due to no plasmonic loss, higher reflectance, decent light scattering, and low cost. Experimental and theoretical works are presented here to demonstrate its feasibility for photovoltaics.
Stencil-FSC method for color break-up suppression and low power consumption in field-sequential LCDs
(2008)
Lin, Fang-Cheng
;
Huang, Yi-Pai
;
Wei, Ching-Ming
;
Shieh, Han-Ping D.
;
Tsai, Chi-Chung
Field sequential color liquid crystal displays (FSC-LCDs) are still facing a serious artifact, colo break-up (CBU), which degrades image quality. Consequently, we propose the "Stencil-FSC" method, applying local color-backlight dimming technology to FSC-LCDs with a 240 Hz field rate which not only suppresses CBU efficiently but also enhances the contrast ratio of images in using ultralow average power consumption. The Stencil-FSC method was demonstrated on a 32-inch FSC-LCD and effectively suppressed CBU, resulting contrast ratio of more than 5,500:1, and average power of less than 45 Watt.
The Coupled Electrical-Optical Simulation of Solar Cell J-V Degradation with Grating Heights
(2014)
Lin, Yu Chiun
;
Zhong, Yan-Kai
;
Fu, Sze Ming
;
Tseng, Chi Wei
;
Lai, Shih-Yun
Solar cell with grating structure is used frequently for increased optical absorption, but it can lead to electrical degradation. Here coupled simulation is conducted to clarify the physical reason causing this J-V degradation.