Browsing by Author "Tsai, Chih-Chung"

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On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs
(2010-06-01)
Dai, Chih-Hao
;
Chang, Ting-Chang
;
Chu, Ann-Kuo
;
Kuo, Yuan-Jui
;
Chen, Shih-Ching
This letter systematically investigates the mechanism of gate-induced floating-body effect (GIFBE) in advanced partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Based on different operation conditions, we found that the hole current collected by the body terminal is strongly dependent on electrons in the inversion layer under a source/drain ground. This implies that GIFBE can be attributed to anode hole injection (AHI) rather than the widely accepted mechanism of electron valence band tunneling. Moreover, GIFBE was also analyzed as a function of temperature. The results provide further evidence that the accumulation of holes in the body results from the AHI-induced direct tunneling current from the gate.
Transient-to-Digital Converter for ESD Protection Design in Microelectronic Systems
(2008)
Ker, Ming-Dou
;
Yen, Cheng-Cheng
;
Liao, Chi-Sheng
;
Chen, Tung-Yang
;
Tsai, Chih-Chung
An on-chip transient-to-digital converter for system-level electrostatic discharge (ESD) protection is proposed. The proposed transient-to-digital converter is designed to detect fast electrical transients during the system-level ESD events. The output digital thermometer codes can correspond to different ESD voltages under system-level ESD tests. The experimental results in a 0.18-mu m CMOS integrated circuit (IC) with 3.3-V devices have confirmed the detection function and digital output codes.
Transient-to-Digital Converter for Protection Design in CMOS Integrated Circuits against Electrical Fast Transient
(2009)
Yen, Cheng-Cheng
;
Ker, Ming-Dou
;
Liao, Chi-Sheng
;
Chen, Tung-Yang
;
Tsai, Chih-Chung
An on-chip transient-to-digital converter for protection design against electrical fast transient (EFT) is proposed. The proposed transient-to-digital converter is designed to detect fast electrical transients under EFT tests. The output digital codes can correspond to different EFT voltages during the EFT-induced transient disturbances. The experimental results in a 0.18-mu m CMOS integrated circuit (IC) with 3.3-V devices have confirmed the detection function and digital output codes.