Browsing by Author "Tsai, Chih-Tsung"

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Application of Supercritical CO(2) Fluid for Dielectric Improvement of SiO(x) Film
(2009-01-01)
Tsai, Chih-Tsung
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Chang, Ting-Chang
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Liu, Po-Tsun
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Cheng, Yi-Li
;
Kin, Kon-Tsu
In this paper the supercritical carbon dioxide (SCCO(2)) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (SiO(x)) film at 150 degrees C. After the treatment of SCCO(2) fluid mixed with ethyl alcohol and pure H(2)O, the oxygen content of SiO(x) film increases and the traps within SiO(x) are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10(-2) to 3x10(-8) A/cm(2) at an electric field of 3 MV/cm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.
Application of Supercritical CO2 Fluid for Dielectric Improvement of SiOx Film
(2009-01-01)
Tsai, Chih-Tsung
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Chang, Ting-Chang
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Liu, Po-Tsun
;
Cheng, Yi-Li
;
Kin, Kon-Tsu
In this paper the supercritical carbon dioxide (SCCO2) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide (SiOx) film at 150 degrees C. After the treatment of SCCO2 fluid mixed with ethyl alcohol and pure H2O, the oxygen content of SiOx film increases and the traps within SiOx are terminated by forming Si-O-Si feature bonds. The leakage current density reduces from 10(-2) to 3x10(-8) A/cm(2) at an electric field of 3 MV/cm due to the passivation of traps, and the hysteresis effect in the capacitance-voltage curve is eliminated.
Application of supercritical fluids for amorphous silicon thin film transistors
(2006-01-01)
Tsai, Chih-Tsung
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Chang, Ting-Chang
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Liu, Po-Tsun
;
Yang, Po-Yu
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光電工程學系
Supercritical fluid technology([1,2]) is employed for the first time to passivate the defect states in amorphous silicon thin film transistors (a-Si.-H TFTs) at low temperature (150 degrees C). Due to supercritical fluids have gas-like properties of diffusivity and viscosity that allow it to efficiently carry H2O molecule into amorphous thin film and passivates defects at low temperature, Experiment results indicate that superior transfer characteristic is obtained and the density of states (DOS) is reduced significantly after the treatment of supercritical fluids mixed with water/propyl alcohol.
Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory
(2010)
Chen, Min-Chen
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Chang, Ting-Chang
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Huang, Sheng-Yao
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Chen, Shih-Ching
;
Hu, Chih-Wei
This study investigates a sputtered InGaZnO (IGZO) thin film to apply into a resistive random access memory device. After the formation of an indium tin oxide (ITO)/IGZO/ITO structure at room temperature, the device exhibits a repeatable bipolar resistance switching behavior without an electroforming process and an excellent transmittance in the visible region. The conduction mechanisms for low and high resistance states are dominated by Ohm's law and space-charge-limited current behavior, respectively. In retention and endurance tests, a resistance ratio of more than 1 order remains after 10(4) s at 90 degrees C and after 100 dc voltage sweeping cycles. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3360181] All rights reserved.
Effects of supercritical CO2 fluid on sputter-deposited hafnium oxide
(2007-05-28)
Liu, Po-Tsun
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Tsai, Chih-Tsung
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Yang, Po-Yu
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光電工程學系
;
顯示科技研究所
Low-temperature supercritical fluid (SCF) technology is employed to improve the dielectric characteristics of metal oxide film deposited at low temperature. In this investigation, hafnium oxide (HfO2) film was sputter deposited at room temperature and post-treated with SCF at 150 degrees C, replacing typical high-temperature annealing process. From Fourier transformation infrared and thermal desorption spectroscopy measurement, the absorption peaks of Hf-O-Hf bonding and the oxygen content in HfO2 film have, respectively, shown apparent raise. The leakage current density of the low-temperature deposited HfO2 film is reduced significantly, and the conduction mechanism is modified from trap-assisted quantum tunneling to thermionic emission process, since SCF treatment effectively reduces the number of traps in HfO2 film. (C) 2007 American Institute of Physics.
Effects of supercritical fluids activation on carbon nanotube field emitters
(2007-01-01)
Liu, Po-Tsun
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Tsai, Chih-Tsung
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Chang, Ting- Chang
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Kin, Kon-Tsu
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Chang, Pei-Lin
This paper proposes a novel method to enhance the emission characteristics of carbon nanotubes (CNTs). It is extremely possible for CNTs to adsorb moisture and other contaminants during the fabrication processes, leading to the degraded field emission characteristics. In., this work, CNT emitters are activated with commonly used heating process and supercritical carbon dioxide (SCCO2) fluids technology for removing adsorbed residue moisture. Experimental results have demonstrated that the electrical stability and field emission enhancement of CNT emitters are effectively achieved by the SCCO2 fluids treatment compared to the heating process, due to the minimization of residuary moisture in CNTs.
Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain
(2010-11-25)
Dai, Chih-Hao
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Chang, Ting-Chang
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Chu, Ann-Kuo
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Kuo, Yuan-Jui
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Chen, Shih-Ching
The influence of tensile mechanical strain on gate-induced floating-body effect (GIFBE) in advanced partially depleted SOI n-MOSFETs was investigated. Both drain current and mobility enhance after applying strain due to the reduction of average transfer effective mass. However, it was found that the GIFBE becomes serious under the mechanical strain. To explain this phenomenon, we first clarify the mechanism of GIFBE using different operation conditions. The experiment results indicate that the GIFBE can be attributed to the anode hole injection (AHI) rather than the widely accepted mechanism of electron band (EVB) tunneling. Based on the AHI model, the enhanced GIFBE under the mechanical strain is mainly due to the narrowing of band gap induced by the strain in the poly-gate. (C) 2010 Elsevier B.V. All rights reserved.
Improving Resistance Switching Characteristics with SiGeO(x)/SiGeON Double Layer for Nonvolatile Memory Applications
(2011-01-01)
Syu, Yong-En
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Chang, Ting-Chang
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Tsai, Chih-Tsung
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Chang, Geng-Wei
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Tsai, Tsung-Ming
The switching layer with SiGeO(x)/SiGeON structure is investigated to improve the electrical characteristics of resistive nonvolatile memory. A bipolar resistance switching behavior owning inferior stability was observed in Pt/SiGeO(x)/TiN memory cells. To obtain practical memory, a convenient and compatible SiGeON (similar to 5 nm) is introduced at SiGeO(x)/anode interface to stabilize the disruption length of filaments near anode electrode. Compared with Pt/SiGeO(x)/TiN memory cells, the proposed Pt/SiGeO(x)/SiGeON/TiN cells is effective at minimizing the dispersions of memory switching parameters. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3615823] All rights reserved.
Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications
(2011-01-01)
Syu, Yong-En
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Chang, Ting-Chang
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Tsai, Chih-Tsung
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Chang, Geng-Wei
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Tsai, Tsung-Ming
The switching layer with SiGeOx/SiGeON structure is investigated to improve the electrical characteristics of resistive nonvolatile memory. A bipolar resistance switching behavior owning inferior stability was observed in Pt/SiGeOx/TiN memory cells. To obtain practical memory, a convenient and compatible SiGeON (similar to 5 nm) is introduced at SiGeOx/anode interface to stabilize the disruption length of filaments near anode electrode. Compared with Pt/SiGeOx/TiN memory cells, the proposed Pt/SiGeOx/SiGeON/TiN cells is effective at minimizing the dispersions of memory switching parameters. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3615823] All rights reserved.
Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
(2010-06-28)
Chen, Min-Chen
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Chang, Ting-Chang
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Tsai, Chih-Tsung
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Huang, Sheng-Yao
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Chen, Shih-Ching
The InGaZnO taken as switching layer in resistive nonvolatile memory is proposed in this paper. The memory cells composed of Ti/InGaZnO/TiN reveal the bipolar switching behavior that keeps stable resistance ratio of 10(2) with switching responses over 100 cycles. The resistance switching is ascribed to the formation/disruption of conducting filaments upon electrochemical reaction near/at the bias-applied electrode. The influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively. Experimental results demonstrate that the switching behavior is selective by the electrode. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456379]
Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
(2011-07-11)
Chen, Te-Chih
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Chang, Ting-Chang
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Hsieh, Tien-Yu
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Lu, Wei-Siang
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Jian, Fu-Yen
This letter investigates the degradation mechanism of amorphous indium-gallium-zinc oxide thin-film transistors under gate-bias stress. The larger V(t) shift under positive AC gate-bias stress when compared to DC operation indicates that an extra electron trapping mechanism occurs during rising/falling time during the AC pulse period. In contrast, the degradation behavior under illuminated negative gate-bias stress exhibits the opposite degradation tendency. Since electron and hole trapping are the dominant degradation mechanisms under positive and illuminated negative gate-bias stress, respectively, the different degradation tendencies under AC/DC operation can be attributed to the different trapping efficiency of electrons and holes. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3609873]
Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications
(2008-08-04)
Tsai, Chih-Tsung
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Chang, Ting-Chang
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Liu, Po-Tsun
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Cheng, Yi-Li
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Huang, Fon-Shan
In this work, the supercritical CO(2) fluid mixed with cosolvents is introduced to terminate the traps in electron-gun (e-gun) evaporation deposited silicon oxide (SiO(x)) film at 150 degrees C. After the proposed treatment, the SiO(x) film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 10(2) times and the retention time attains to 2x10(3) s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps. (C) 2008 American Institute of Physics.
Low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization
(2007-07-02)
Tsai, Chih-Tsung
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Chang, Ting-Chang
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Liu, Po-Tsun
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Yang, Po-Yu
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Kuo, Yu-Chieh
A low-temperature method, supercritical CO2 fluid (SCF) technology, is proposed to improve the dielectric properties of ultrathin hafnium oxide (HfO2) film at 150 degrees C without significant formation of parasitic oxide at the interface between HfO2 and Si substrate. In this research, the HfO2 films were deposited by dc sputter at room temperature and post-treated by SCF which is mixed with 5 vol % propyl alcohol and 5 vol % H2O. From high-resolution transmission electron microscopy image, the interfacial oxide of SCF-treated HfO2 film is only 5 angstrom thick. Additionally, the enhancements in the qualities of sputter-deposited HfO2 film after SCF process are exhibited by x-ray photoelectron spectroscopy and capacitance-voltage (C-V) measurement. (c) 2007 American Institute of Physics.
Low-temperature passivation of amorphous-silicon thin-film transistors with supercritical fluids
(2007-07-01)
Tsai, Chih-Tsung
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Liu, Po-Tsun
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Chang, Ting-Chang
;
Wang, Chen-Wen
;
Yang, Po-Yu
In this letter, supercritical CO2 (SCCO2) fluids technology is employed for the first time to effectively passivate the defect states in hydrogenated amorphous-silicon thin-film transistors (a-Si:H TFTs) at low temperature (150 degrees C). With the high transport and diffusion properties of SCCO2 fluids, it is proposed to act as a transporter in delivering the H2O molecules into the amorphous-silicon film and repairing defect states by the H2O molecules. In addition, the propyl alcohol is used as the surfactant between nonpolar-SCCO2 fluids and polar-H2O molecules for mingling H2O molecules uniformly with the SCCO2 fluids. After the treatment Of SCCO2 fluids mixed with water and propyl alcohol, the a-Si:H TFT exhibited superior transfer characteristics and lower threshold voltage. The improvement in electrical characteristics could be verified by the significant reduction of density of states in the mobility gap of amorphous-silicon.