Browsing by Author "Tsai, Chih-Wen"

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Air-Stable N-type Organic Microribbon Transistors Based on Perylene Diimides Derivatives
(2015)
Tseng, Pin-Yen
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Hsieh, Gen-Wen
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Wang, Cheng-Wei
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Hung, Chun-Yi
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Tsai, Chih-Wen
We report a new type of organic microribbon via solution phase self-assembly from a conjugated small molecule N, N\'-bis[2-(4-fluoro-phenyl)-ethyl]-3,4,9,10-perylenetetradicarboximide (4F-PEPTC) for use in organic field effect transistors. Devices based on a network of 4F-PEPTC microribbons show a typical n-channel field effect behavior with average current ratio >10(3) and exhibit excellent air stability in ambient air over 30 days.
Germanium Nanowire-induced Mobility Enhancement in Polythiophene Field Effect Transistors
(2017-01-01)
Hsieh, Gen-Wen
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Chan, Chih-Yu
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Tsai, Chih-Wen
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光電工程學系
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Department of Photonics
P-channel solution-processed organic thin film transistors based on a dual layer semiconducting network of polythiophene polymers and oriented germanium nanowires show a marked enhancement of up to five-fold in hole field effect mobility with respect to that of pristine polythiophene devices. The work presented here furthers our understanding of the interaction between polythiophene and oriented nanowires. The nanowire orientation relative to the soure and drain electrodes plays a crucial role in substantially influencing the polymer morphology and transistor performance.
Germanium nanowire/conjugated semiconductor nanocomposite field effect transistors
(2018-06-01)
Lin, Sheng-Yu
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Chan, Chih-Yu
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Tsai, Chih-Wen
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Hsieh, Gen-Wen
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光電系統研究所
We demonstrate p-channel solution-processed nanocomposite field effect transistors based on a novel bilayer semiconductor of conjugated 6,13-bis(triisopropylsilylethinyl) pentacene (TIPS-PEN) or poly (3-octylthiophene-2,5-diyl) (P3OT) on an ordered network of germanium (Ge) nanowires. With an appropriate loading of Ge nanowires into the active channel, nanocomposite transistors show an enhancement of more than a factor of 10 over pristine devices. A hole carrier mobility as high as 0.248 cm(2) V(-1)s(-1) can be achieved based on the heterogeneous Ge/TIPS-PEN network. Moreover, the nanowire orientation relative to the source and drain contacts plays a crucial role in influencing the effective charge transport pathway and mobility anisotropy. It is expected that the nanocomposite FETs with oriented nanowire networks may open up a promising alternative route for the creation of next generation optoelectronic devices.