Browsing by Author "Tsai, Chih-Ya"

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12 GHz passive harmonic mode-locking in a 1.06 mu m semiconductor optical amplifier-based fiber laser with figure-eight cavity configuration
(2013-03-15)
Chen, Hou-Ren
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Lin, Kuei-Huei
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Tsai, Chih-Ya
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Wu, Hsiao-Hua
;
Wu, Chih-Hsuan
We report the generation of passively harmonic mode-locked pulses using a 1.06 mu m semiconductor optical amplifier (SOA) in a figure-eight laser configuration operated in the all-normal-dispersion regime. Different orders of harmonic mode-locking can be obtained from 30 MHz to 12.02 GHz by changing the injection current of the SOA from 80 to 660 mA together with the adjustment of polarization controllers. The highest pulse repetition rate increases almost linearly with the SOA current. As SOA current is set to 660 mA, we obtain the intracavity power of 46 mW at the highest repetition rate of 12.02 GHz, corresponding to the 1202th harmonic of the fundamental mode-locking frequency. To our best knowledge, this is the lowest intracavity power to generate the highest repetition rate with a passively mode-locked laser in the all-normal-dispersion regime. (C) 2013 Optical Society of America
Complex Oxide-Noble Metal Conjugated Nanoparticles
(2013-04-11)
Guo, Jun-Ling
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Chiou, Yao-De
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Liang, Wen-I
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Liu, Heng-Jui
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Chen, Ying-Jiun
Hybrid nanoparticles (NPs) composed of multiple components offer new opportunities for next-generation materials. In this study, a paradigm for the noble metal/ternary complex oxide hybrid NPs is reported by adopting pulsed laser ablation in liquids. As model hybrids, gold-spinel heterodimer (Au-CoFe2O4) and gold-pervoskite heterodimer (Au-SrTiO3) NPs are investigated. This work has demonstrated the diverse playgroup of NP conjugation enlarged by complex oxides.
High-power passively continuous-wave and Q-switching mode-locked Nd:LuVO4 laser by few-layer graphene-oxide films
(2016-12-01)
Chen, Hou-Ren
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Tsai, Chih-Ya
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Cheng, Hsin-Ming
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Lin, Kuei-Huei
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Chen, Chyong-Hua
Using a series of different concentration polymer-free graphene oxide (GO) films as saturable absorbers (SAs), we demonstrate high-power passively continuous-wave modelocking (CW-ML) and Q-switching mode-locking (QS-ML) for a Nd: LuVO4 laser at 1 mu m. CW-ML pulses of 6.62 ps with maximum output power of 3.89 W have been achieved to give the highest pulse peak power of 4.85 kW and pulse energy of 32.14 nJ under 15-W pumping by using SAs of 84.4% transmittance. Using SAs with a lower transmittance having a larger modulation depth of 75.9% and 63.4%, we obtain both the CW-ML pulses of 4.85-ps and QSML pulses with 2.73 W and 1.92 W output powers, respectively. (C) 2016 Optical Society of America
High-power, passively mode-locked Nd:GdVO(4) laser using single-walled carbon nanotubes as saturable absorber
(2011-04-01)
Chen, Hou-Ren
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Wang, Yong-Gang
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Tsai, Chih-Ya
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Lin, Kuei-Huei
;
Chang, Teng-Yao
We use a new (to our knowledge) fabrication method of a single-walled carbon nanotube (SWCNT) absorber without polymer to sustain high-power illumination. Using a series of saturable absorbers (SAs) incorporating different amounts of SWCNTs, we demonstrate mode-locking for a Nd:GdVO(4) laser in the 1 mu m spectral range. Continuous-wave mode-locking (CWML) pulses with a maximum output power of 3.6 W at 1063 nm and high noise extinction of 61 dB has been achieved to give the highest pulse peak power of 3.6 kW and pulse energy of 30 nJ under 15 W pumping. To our knowledge, this is the highest CWML output power with SWCNT-SAs reported. The measured nonlinear absorption of the SWCNT-SAs shows a modulation depth of similar to 3% with subpicosecond recovery time. (C) 2011 Optical Society of America
High-power, passively mode-locked Nd:GdVO4 laser using single-walled carbon nanotubes as saturable absorber
(2011-04-01)
Chen, Hou-Ren
;
Wang, Yong-Gang
;
Tsai, Chih-Ya
;
Lin, Kuei-Huei
;
Chang, Teng-Yao
We use a new (to our knowledge) fabrication method of a single-walled carbon nanotube (SWCNT) absorber without polymer to sustain high-power illumination. Using a series of saturable absorbers (SAs) incorporating different amounts of SWCNTs, we demonstrate mode-locking for a Nd:GdVO4 laser in the 1 mu m spectral range. Continuous-wave mode-locking (CWML) pulses with a maximum output power of 3.6 W at 1063 nm and high noise extinction of 61 dB has been achieved to give the highest pulse peak power of 3.6 kW and pulse energy of 30 nJ under 15 W pumping. To our knowledge, this is the highest CWML output power with SWCNT-SAs reported. The measured nonlinear absorption of the SWCNT-SAs shows a modulation depth of similar to 3% with subpicosecond recovery time. (C) 2011 Optical Society of America
High-quality and Large-size Topological Insulator Bi2Te3-Gold Saturable Absorber Mirror for Mode-Locking Fiber Laser
(2016-12-05)
Chen, Hou-Ren
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Tsai, Chih-Ya
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Cheng, Hsin-Ming
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Lin, Kuei-Huei
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Yen, Po-Hsiu
A novel high-quality, large-size, reflection-type topological insulator Bi2Te3-Gold (BG) film-based nonlinear optical modulator has been successfully fabricated as a two-dimensional saturable absorber mirror (SAM) by pulsed laser deposition (PLD). This BG-SAM possesses saturation fluence of 108.3 mu J/cm(2), modulation depth (Delta R) of 6.5%, non-saturable loss of 38.4%, high damage threshold above 1.354 mJ/cm(2) and excellent uniformity providing for the generation of passive mode-locked (ML) pulses for erbium-doped fiber lasers (EDFLs) on a large sample area. Under 124 mW 976 nm pumping, We obtained 452-fs continuous-wave ML pulses with pulse energy of 91 pJ and full width at halfmaximum (FWHM) of 6.72-nm from this EDFL. The results clearly evidence that the PLD is an efficient method for fabricating BG-SAM that is suitable for a compact ultrafast ML fiber laser system.
Influence of basal stacking faults on luminescence of m-plane Mg0.19Zn0.81O/ZnO quantum wells grown on a two-step MgZnO-buffer layer
(2019-03-01)
Wu, Yung-Chi
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Chang, Ning-An
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Yang, Tsung-Han
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Tsai, Chih-Ya
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Chen, Hou-Ren
Different well widths of m-plane Mg0.19Zn0.81O/ZnO multiple quantum wells (MQWs) have been fabricated on the two-step pregrown MgZnO-buffered m-plane sapphires by a pulsed laser deposition and have a narrower linewidth on x-ray diffraction than ZnO-buffered MQWs. By using the variation method to calculate the band diagram and by corroborating the results of temperature-dependent photoluminescence, we confirm the binding energies of free exciton and basal-stacking-fault-bound exciton, which is composed of electrons in the barrier and confined hole in the narrow-width MQWs. The coupling of A1(LO) phonon with excitons in m-MQWs shows more sensitivity toward a decrease in well width than E2(low), due to the crystal symmetry and the reduced Bohr radius. (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE)
Investigation of Graphene Dispersion From Kelly Sideband in Stable Mode-Locked Erbium-Doped Fiber Laser by Few-Layer Graphene Saturable Absorbers
(2015-11-01)
Chen, Hou-Ren
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Tsai, Chih-Ya
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Chang, Ching-Yang
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Lin, Kuei-Huei
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Chang, Chen-Shiung
In this paper, stable passively mode-locked fiber lasers (MLFLs) constructed using graphene saturable absorbers (SAs) with different layer numbers of similar to 1 to similar to 15 have been reported. The flat linear transmission spectrum in the range from 1540 to 1580 nm without any distinct absorption peak implies that the graphene SAs exhibit low dispersion in this region. Therefore, stable soliton-like pulses are generated because of negative dispersion provided by the fiber laser cavity, which requires no additional single-mode fiber (SMF) for dispersion compensation. Power-dependent transmission measurements show that the saturation intensity ranges from 1.2 to 3.2 MW/cm(2) and that the modulation depth (MD) of the graphene SAs increases with the number of graphene layers. All the samples were observed to easily mode-lock the laser with a stable mode-locking state persistently operated over hours. By analyzing the soliton Kelly sidebands, we deduced the group delay dispersion (GDD) for different layers of the graphene. The calculated results show that the variation of sample GDD is within the calculation error, indicating that the GDD of graphene is small to be negligible. This result is consistent with the experimental results reported by Chang et al. [Appl. Phys. Lett. 97, 211102 (2010)] using the phase-shift method. This study demonstrates that different layers graphene SAs have different MD contributions to the generation of laser pulses with different pulse widths.
Passive mode locking of ytterbium- and erbium-doped all-fiber lasers using graphene oxide saturable absorbers
(2014-06-02)
Chen, Hou-Ren
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Tsai, Chih-Ya
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Cheng, Hsin-Ming
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Lin, Kuei-Huei
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Hsieh, Wen-Feng
Broadband graphene oxide/PVA films were used as saturable absorbers (SAs) for mode locking erbium-doped fiber laser (EDFL) and ytterbium-doped fiber laser (YDFL) at 1.06 mu m and 1.55 mu m. They provide modulation depths of 3.15% and 6.2% for EDFL and YDFL, respectively. Stable self-starting mode-locked pulses are obtained for both lasers, confirming that the graphene oxide is cost-effective. We have generated mode-locked pulses with spectral width, repetition rate, and pulse duration of 0.75 nm, 9.5 MHz, and 2.7 ps. This is the shortest pulse duration directly obtained from an all-normal-dispersion YDFL with graphene-oxide saturable absorber. (C) 2014 Optical Society of America
Phase retrieval by using the transport-of-intensity equation with Hilbert transform
(2016-04-01)
Li, Wei-Shuo
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Chen, Chun-Wei
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Lin, Kuo-Feng
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Chen, Hou-Ren
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Tsai, Chih-Ya
Phase recovery by solving the transport-of-intensity equation (TIE) is a non-iterative and non-interferometric phase retrieval technique. From solving the TIE with conventional, one partial derivative and Hilbert transform methods for both the periodic and aperiodic samples, we demonstrate that the Hilbert transform method can provide the smoother phase images with edge enhancement and fine structures. Furthermore, compared with the images measured by optical and atomic force microscopy, the Hilbert transform method has the ability to quantitatively map out the phase images for both the periodic and aperiodic structures. (C) 2016 Optical Society of America
Room temperature excitonic dynamics of non-polar a-plane ZnO epifilms
(2016-09)
Lin, Ja-Hon
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Liu, Wei-Rein
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Lin, Yi-Chin
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Su, Hsing-Jung
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Chen, Hou-Ren
Pump polarization dependent carrier dynamics, particularly excitonic dynamics, of non-polar a-plane zinc oxide (ZnO) epifilms with two different thicknesses were investigated using time resolved measurements. Unlike the electron and hole dynamics through the above-bandgap excitation, transient differential reflectance (TDR) traces revealed similar trends under two orthogonal pump polarization conditions relative to the c-axis (E-pu +/- c and E-pu vertical bar vertical bar c) of a-ZnO around near-exciton-resonance excitation. By means of a band diagram, the bandgap renormalization (BGR) effect can be reasonably explained by the screening of the Coulomb potential energy due to the accumulation of relaxed free carriers that were initially excited through the absorption of two cascaded pump photons via the excitonic level, a process known as two photon absorption (TPA). Thus, the modulation depths of the TPA around zero time delay, due to simultaneous absorption of one pump and one probe photon via the excitonic level, increased linearly with the pump fluence, proportional to the modulation depth resulting from the BGR effects. (C) 2016 Author(s).
Stable and Self-Starting Passively Mode-Locked Fiber Laser for 1.06 mu m and 1.55 mu m by Using Graphene Oxide Saturable Absorber
(2013)
Chen, Hou-Ren
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Tsai, Chih-Ya
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Lin, Kuei-Huei
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Wang, Jing-Yun
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Hsieh, Wen-Feng
Graphene oxide/PVA film is used as saturable absorber for mode locking erbium-doped fiber laser and ytterbium-doped fiber laser. It provides modulation depths of 2.6% and 6% at 1.06 mu m and 1.55 mu m, respectively. Stable mode-locked pulses are obtained for both lasers confirming that graphene oxide is cost- effective for 1.06-mu m and 1.55-mu m pulse generations.
Strain-Mediated Inverse Photoresistivity in SrRuO3/La0.7Sr0.3MnO3 Superlattices
(2016-02-02)
Liu, Heng-Jui
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Wei, Tzu-Chiao
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Zhu, Yuan-Min
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Liu, Rui-Rui
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Tzeng, Wen-Yen
In the pursuit of novel functionalities by utilizing the lattice degree of freedom in complex oxide heterostructure, the control mechanism through direct strain manipulation across the interfaces is still under development, especially with various stimuli, such as electric field, magnetic field, light, etc. In this study, the superlattices consisting of colossal-magnetoresistive manganites La0.7Sr0.3MnO3 (LSMO) and photostrictive SrRuO3 (SRO) have been designed to investigate the light-dependent controllability of lattice order in the corresponding functionalities and rich interface physics. Two substrates, SrTiO3 (STO) and LaAlO3 (LAO), have been employed to provide the different strain environments to the superlattice system, in which the LSMO sublayers exhibit different orbital occupations. Subsequently, by introducing light, we can modulate the strain state and orbital preference of LSMO sublayers through light-induced expansion of SRO sublayers, leading to surprisingly opposite changes in photoresistivity. The observed photoresistivity decreases in the superlattice grown on STO substrate while increases in the superlattice grown on LAO substrate under light illumination. This work has presented a model system that demonstrates the manipulation of orbital-lattice coupling and the resultant functionalities in artificial oxide superlattices via light stimulus.
Tuning the functionalities of a mesocrystal via structural coupling
(2015-07-14)
Liu, Heng-Jui
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Liu, Yun-Ya
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Tsai, Chih-Ya
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Liao, Sheng-Chieh
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Chen, Ying-Jiun
In the past decades, mesocrystal, a kind of nanocrystals with specific crystallographic orientation, has drawn a lot of attention due to its intriguing functionalities. While the research community keeps searching for new mesocrystal systems, it is equally crucial to develop new approaches to tune the properties of mesocrystals. In this work, a self-organized two-dimensional mesocrystal composed of highly oriented CoFe2O4 (CFO) nano-crystals with assistance of different perovskite matrices is studied as a model system. We have demonstrated that the strain state and corresponding magnetic properties of the CFO mesocrystal can be modulated by changing the surrounding perovskite matrix through their intimate structural coupling. Interestingly, this controllability is more strongly correlated to the competition of bonding strength between the matrices and the CFO mesocrystals rather than the lattice mismatch. When embedded in a matrix with a higher melting point or stiffness, the CFO mesocrystal experiences higher out-of-plane compressive strain and shows a stronger magnetic anisotropy as well as cation site-exchange. Our study suggests a new pathway to tailor the functionalities of mesocrystals.
Tuning the magnetic properties of self-assembled BiFeO3-CoFe2O4 heteroepitaxy by magneto-structural coupling
(2016)
Amrillah, Tahta
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Vandrangi, Suresh K.
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Bitla, Yugandhar
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Do, Thi Hien
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Liao, Sheng-Chieh
Magnetic and multiferroic nanocomposites with two distinct phases have been a topic of intense research for their profound potential applications in the field of spintronics. In addition to growing high-quality phase separated heteroepitaxial nanocomposites, the strain engineering that is conducive to enhance the tunability of material properties, in general, and the magnetic properties, in particular, is of utmost importance in exploring new possibilities. Here, we investigated the magneto-structural coupling between anti-ferromagnetic BiFeO3 (BFO) and ferrimagnetic CoFe2O4 (CFO) in self-assembled vertically aligned nanocomposites grown on LaAlO3 (LAO) and SrTiO3 (STO) substrates. We found that BFO exhibits tetragonal (T) and rhombohedral (R) structures as the stable phases and CFO has high magnetocrystalline anisotropy even in the form of nanocomposites. The temperature and magnetic field dependent magnetizations of T_ BFO-CFO/LAO and R_ BFO-CFO/STO nanocomposites primarily demonstrate the magnetoelastic coupling between these variants.
van der Waal Epitaxy of Flexible and Transparent VO2 Film on Muscovite
(2016-06-14)
Li, Chien-I
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Lin, Jheng-Cyuan
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Liu, Heng-Jui
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Chu, Ming-Wen
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Chen, Hsiao-Wen
Vanadium dioxide (VO2) is a compelling candidate for next-generation electronics beyond conventional silicon-based devices due to the exhibition of a sharp metal insulator transition. In this study, in order to realize functional VO2 film for flexible electronics, the growth of VO2 film directly on a transparent and flexible muscovite via van der Waals epitaxy is established. The heteroepitaxy and structural transition of VO2 films on muscovite are examined by a combination of high resolution X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The unique metal insulator transition of VO2 is further revealed with a change in electrical resistance over 10(3) and a more than 50% variation of optical transmittance. Furthermore, due to the nature of muscovite, the VO2/muscovite heterostructure possesses superior flexibility and optical transparence. The approach developed in this study paves an intriguing way to fabricate functional VO2 film for the applications in flexible electronics.