Browsing by Author "Tsai, HW"

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Comparison of thermal reactions of phosphine on Ge(100) and Si(100) by high-resolution core-level photoemission
(2001-06-20)
Tsai, HW
;
Lin, DS
;
物理研究所
;
Institute of Physics
The thermal decomposition processes of phosphine (PH;) on a Ge(I 0 0)-2 x I surface at temperatures between 325 and 790 K were investigated and compared with those on Si(I 0 0)-2 x 1. High-resolution synchrotron radiation core-level photoemission spectra indicates that. at room temperature phosphine molecularly adsorbs on the Ge(I 0 0)-2 x I surface, however on the Si(1 0 0)-2 x I it partially dissociates into PH2 and H. Successive annealing of the PH3-saturated Si(1 0 0) and Ge(I 0 0) surfaces at higher temperatures similarly converts PH3 into PH2 and PH2 to P. P atoms form stable P-P and/or P-Si dimers on Si(I 0 0) above 720 K. but exhibit complex bonding configurations on Ge(1 0 0). (C) 2001 Elsevier Science B.V. All rights reserved.
The performance and reliability enhancement of ETOX P-channel flash EEPROM cell with P-doped floating-gate
(2003)
Tsai, HW
;
Chiang, PY
;
Chung, SS
;
Kuo, DS
;
Liang, MS
In this paper, we proposed a simple approach for designing reliable and high performance p-channel Flash EEPROM cell from the floating-gate engineering point of view. In other words, a p-type doped floating gate used in a p-channel flash cell can achieve this goal. Results show that the programming speed, gate/drain disturb, read lifetime, and data retention in p-type floating-gate cell are much better than those of n-type floating-gate cell; except that p-type floating-gate cell has slower erasing speed. These results can be used as a guideline for designers to choose.