Browsing by Author "Tsai, Hung-Kuo"

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Enhancement-mode polymer space-charge-limited transistor with low switching swing of 96 mV/decade
(2011-05-30)
Chao, Yu-Chiang
;
Tsai, Hung-Kuo
;
Zan, Hsiao-Wen
;
Hsu, Yung-Hsuan
;
Meng, Hsin-Fei
In this letter, an enhancement-mode polymer space-charge-limited transistor was realized with a low switching swing of 96 mV/decade, a low operation voltage of 1.5 V, and a high on/off current ratio of 10(4). By investigating the influence of the device's geometric parameters on the transistor characteristics, a low switching swing was obtained by positioning the base electrode at the middle of the channel length and reducing the opening diameter. Simulations of the potential distribution at the central vertical channel verified that the base electrode has the best control over the magnitude of potential barrier, resulting in a low switching swing. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3586255]
Polymer space-charge-limited transistor as a solid-state vacuum tube triode
(2010-11-29)
Chao, Yu-Chiang
;
Ku, Ming-Che
;
Tsai, Wu-Wei
;
Zan, Hsiao-Wen
;
Meng, Hsin-Fei
We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3 x 10(5) at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/cm(2) with current gain greater than 1000. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3513334]
Polymer space-charge-limited transistor as a solid-state vacuum tube triode
(2010-11-29)
Chao, Yu-Chiang
;
Ku, Ming-Che
;
Tsai, Wu-Wei
;
Zan, Hsiao-Wen
;
Meng, Hsin-Fei
We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3 x 10(5) at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/cm(2) with current gain greater than 1000. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3513334]