Browsing by Author "Tsai, Li-Shiuan"

Now showing 1 - 2 of 2

Methane Exposure on the Aluminum Nitride Gate Dielectric in Pentacene-Based Organic Thin-Film Transistors
(2009)
Chou, Cheng-Wei
;
Zan, Hsiao-Wen
;
Wang, Chung-Hwa
;
Chen, Wei-Tsung
;
Tsai, Li-Shiuan
The device performance of a pentacene-based organic thin-film transistor (OTFT) fabricated on an aluminum nitride (AlN) surface can be improved by exposing AlN to a methane (CH(4)) gas before device fabrication. The mobility of the OTFT was enhanced from 0.046 to 0.924 cm(2)/V s by exposing AlN to CH(4). Its threshold voltage was reduced from -4.5 to -1.9 V. After the CH(4) exposure, the reduced surface energy of AlN was correlated with the improvement of the OTFT performance. The reduction of surface energy was correlated with the replacement of O-C=O bonds by C-O bonds and hydrocarbon (CH(x)) on the AlN surface. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3182823] All rights reserved.
Solution-based silk fibroin dielectric in n-type C-60 organic field-effect transistors: Mobility enhancement by the pentacene interlayer
(2013-12-02)
Tsai, Li-Shiuan
;
Hwang, Jenn-Chang
;
Lee, Chun-Yi
;
Lin, Yi-Ting
;
Tsai, Cheng-Lun
A pentacene interlayer of 2 nm thick is inserted between fullerene (C-60) and the solution-based silk fibroin dielectric in C-60 organic field-effect transistors (OFETs). The pentacene interlayer assists to improve crystal quality of the C-60 layer, leading to the increase of field-effect mobility (mu(FE)) from 0.014 to 1 cm(2) V-1 s(-1) in vacuum. The mu(FE) value of the C-60 OFET is further enhanced to 10 cm(2) V-1 s(-1) when the OFET is exposed to air in a relative humidity of 55%. Generation of mobile and immobile charged ions in solution-based silk fibroin in air ambient is proposed. (C) 2013 AIP Publishing LLC.