Browsing by Author "Tsai, Meng-Fu"
Now showing 1 - 3 of 3
- Results Per Page
- Sort Options
Item type:Item, IDENTIFICATION AND ADMINISTRATION SYSTEM APPLIED TO PEER-TO-PEER GATEWAY AND METHOD FOR THE SAME(2008-06-12) ;LIN, Po-Ching ;Tsai, Meng-Fu ;Chang, Tsao-Jiang ;Lin, Ying-DarLai, Yuan-ChengAn identification and administration system applied to P2P gateway and a method for the same are proposed. The system is installed in a kernel space, and a plug-in kernel module is in the kernel space to finish preprocessing and application processing of packets on the kernel space without the need of copying data to the user space for processing. Moreover, a connection cache is provided in the kernel space to process source/destination IP addresses, connection ports and protocol identifiers of all packets to recognize and then block identical request packets in reconnections. Therefore, the throughput of content-level security gateway can be increased, and the processing efficiency of packets can also be enhanced.Item type:Item, kP2PADM: An In-Kernel Architecture of P2P Management Gateway(2008-10-01) ;Lin, Ying-Dar ;Lin, Po-Ching ;Tsai, Meng-Fu ;Chang, Tsao-JiangLai, Yuan-ChengManaging increasing traffic from Instant Messengers and P2P applications is becoming more important nowadays. We present an in-kernel architecture of management gateway, namely kP2PADM, built upon open-source packages with several modifications and design techniques. First, the in-kernel design streamlines the data path through the gateway. Second, the dual-queue buffer eliminates head-of-line blocking for multiple connections. Third, a connection cache reduces useless reconnection attempts from the peers. Fourth, a fast-pass mechanism avoids slowing down the TCP transmission. The in-kernel design approximately doubles the throughput of the design in the user space. The internal benchmarks also analyze the impact of each function on performance.Item type:Item, Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor(2019-07-24) ;Tsai, Meng-Fu ;Jiang, Jie ;Shao, Pao-Wen ;Lai, Yu-HongChen, Jhih-WeiWith the rise of Internet of Things, the presence of flexible devices has attracted significant attention owing to design flexibility. A ferroelectric field-effect transistor (FeFET), showing the advantages of high speed, nondestructive readout, and low-power consumption, plays a key role in next-generation technology. However, the performance of these devices is restricted since conventional flexible substrates show poor thermal stability to integrate traditional ferroelectric materials, limiting the compatibility of wearable devices. In this study, we adopt flexible muscovite mica as a substrate due to its good thermal properties and epitaxial integration ability. A flexible FeFET composed of oxide heteroepitaxy on muscovite is realized by combining an aluminum-doped zinc oxide film as the semiconductor channel layer and a Pb(Zro7Ti0.3)03 film as the ferroelectric gate dielectric. The excellent characteristics of the transistor together with superior thermal stability and mechanical flexibility are demonstrated through various mechanical bending and temperature measurements. The on/off current ratio of the FeFET is higher than 103, which based on the field effect in the transfer curve. The smallest bending radius that can be achieved is 5 mm with a cyclability of 300 times and a retention of 100 h. This study opens an avenue to use oxide heteroepitaxy to construct a FeFET for next-generation flexible electronic systems.