Browsing by Author "Tsai, RW"

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Characteristics of Schottky barrier poly-Si thin film transistors with excimer laser annealing treatment
(2003)
Yeh, KL
;
Lin, HC
;
Tsai, RW
;
Lee, MH
;
Huang, TY
Poly-Si Schottky barrier poly-Si thin-film transistors (SB TFT) with field-induced drain (FID) have recently been demonstrated. Such devices exhibit ambipolar operation capability with low off-state leakage current. In this study, we investigate and compare the characteristics of poly-Si SB TFTs with channel layer prepared by either excimer laser crystallization (ELC) or solid-phase crystallization (SPC) method. It is shown that the use of ELC could greatly improve the device characteristics compared to the SPC counterparts. Excellent device performance in terms of steep subthreshold slope and high on/off current ratio (>10(8)) for both p- and n-channel operations are demonstrated on a single device with ELC channel. The effects of sub-gate bias, channel length, and offset channel length, on device characteristics are also explored.
Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistors
(2001-07-30)
Yeh, KL
;
Lin, HC
;
Huang, RG
;
Tsai, RW
;
Huang, TY
Conduction mechanisms for the off-state leakage in Schottky barrier thin-film transistor were explored. It was found that the field-emission process dominates the leakage conduction of the device with the conventional structure as the field strength in the drain junction becomes high, and results in the strong gate-induced drain leakage (GIDL) like phenomenon. In contrast, for the device with a field-induced-drain structure, the high-field region is pulled away from the silicided drain. As a result, the field-emission conduction is eliminated, so the GIDL-like leakage current is effectively suppressed. (C) 2001 American Institute of Physics.
Fabrication and characterization of Schottky barrier polysilicon thin-film transistors with excimer-laser crystallized channel
(2003-04-01)
Yeh, KL
;
Lin, HC
;
Tsai, RW
;
Lee, MH
;
Huang, TY
Schottky barrier thin-film transistors (SB TFT) with field-induced drain (FID) have recently been demonstrated to exhibit ambipolar capability with low off-state leakage current. In this study, we investigate and compare the characteristics of poly-Si SB TFTs with channel layer prepared by excimer laser crystallization (ELC) and solid-phase crystallization (SPC). It is shown that the use of ELC could greatly improve the device characteristics, comparing to the SPC counterparts. Excellent device performance with steep subthreshold slope and on/off current ratio higher than 10(8) for both p- and n-channel operations are demonstrated on a single device with ELC channel. The effects of sub-gate bias, channel length, and channel offset length, on device characteristics are also explored.
Reduction of off-state leakage current in Schottky barrier thin-film transistors (SBTFT) by a field-induced drain
(2002-04-01)
Yeh, KL
;
Lin, HC
;
Huang, RG
;
Tsai, RW
;
Huang, TY
Detailed conduction mechanisms in a conventional Schottky barrier thin-film transistor (SBTFT) and a recently proposed novel SBTFT with field-induced drain (FID) extension have been studied. The new SBTFT device with FID extension shows excellent ambipolar performance with effective suppression of gate-induced drain leakage (GIDL)-like off-state leakage that plagues conventional SBTFT devices. By characterizing the activation energy of the conduction process in the off-state for conventional SBTFT devices, it is suggested that field emission of carriers from the drain junction is the major conduction mechanism. While for the FID SBTFT devices, owing to the effect of Fermi level pinning in the FID region, thermionic emission rather than field emission becomes the dominant conduction mechanism, resulting in the effective suppression of the undesirable GIDL-like leakage current.