Browsing by Author "Tsai, ST"

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A novel dual focus objective lens for DVD/CD pick-up head
(1998-03-01)
Liu, PY
;
Shieh, HPD
;
Ju, JJ
;
Tsai, ST
;
Yang, TM
A new dual focus objective lens of combinig aspherical surfaces of DVD and CD for DVD/CD pick-up head was designed. Numerical analysis based on the diffraction model were studied to trade off the spot size, side lobe, and energy ratio of DVD and CD, The hybrid aspherical surfaces of DVD and CD are optimized for low aberration. The spot size of full wave half maximum (FWHM) are 0.553 and 0.88 mu m for DVD and CD, respectively, measured from thus constructed double rings lens.
Fabrication and electrical characterization of nanoscaled-Schottky diodes based on metal silicide/silicon nanowires with scanning probe lithography and wet etching
(2006-04-01)
Sheu, JT
;
Yeh, SP
;
Lien, CH
;
Tsai, ST
;
材料科學與工程學系奈米科技碩博班
Nanometer-sized Schottky diodes based on nickel monosilicide (NiSi)/silicon nanowire (SiNW) heterojunction have been fabricated and studied for their electrical transport characteristics. The SiNW was fabricated by scanning probe lithography (SPL) and tetramethylammonium (TMAH) wet etching. The diameter and height of the SiNWs were 60 and 25 nm, respectively. A Schottky barrier diode was obtained by patterning nickel film onto half of the SiNW by conventional lithography, and then forming nickel monosilicide by the solid state reaction between nickel and silicon under rapid thermal annealing (RTA) in N-2 ambient for 1 min. The current-voltage characteristics measured exhibited clear rectifying behavior consistent with a 0.22 eV schottky barrier height, and no reverse bias breakdown was observed up to a voltage of -5 V.
Nanoflash device with self-aligned double floating gates using scanning probe lithography and tetramethylammonium hydroxide wet etching
(2004-11-01)
Sheu, JT
;
Chen, CC
;
You, KS
;
Tsai, ST
;
材料科學與工程學系奈米科技碩博班
We report a self-aligned technology for nanoflash devices with double floating gates using scanning probe lithography (SPL) technology and anisotropic wet etching. On a (110) SOI silicon wafer, along [001] and [111] directions, a silicon nanowire was generated through local oxidation with SPL followed by wet etching with tetramethylammonium hydroxide solution. Silicon nanowires (SiNW) with profiles of sidewall either sloped or vertical were formed after anisotropic etching in the [001] or [111] direction respectively. After deposition of a polysilicon film on the SiNW with low pressure chemical vapor deposition, nanostructures of a nanoflash device with polysilicon double-floating side gates were obtained along the [111] part of SiNW after reactive ion etching spacer etching. The silicon nanowire channel has a width of 20 nm and a height of 200 rim; the width of the self-aligned floating gate is approximately 40 rim. Silicon nitride was deposited to serve as gate dielectric. The top gate and source-drain aluminum pads were defined by photo litholgraphy. Electrical properties of such a nanoflash device with double-floating side gates are discussed. (C) 2004 American Vacuum Society.