Browsing by Author "Tsai, Yi-Jen"

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Facile sol-gel preparation of nanocrystal embedded thin film material for memory device
(2013-01-01)
Wu, Chi-Chang
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Tsai, Yi-Jen
;
Liu, Pin-Lin
;
Yang, Wen-Luh
;
Ko, Fu-Hsiang
A promising charge trapping film with crystal embedded material is proposed for future electronic devices. Instead of conventional high-vacuum and expensive tool, this technique adopts very cheaper process of sol-gel spin-coating for fabrication of thin film material in the charge trapping flash memory (CTFM). The crystal from spinodal phase separation is observed for sol-gel thin film at 900 degrees C annealing, and is strongly related to the thickness of the spin-coated thin film. The morphology of the crystal from the ethanol solvent system is in the isolated form, while from 2-propanol solvent is in the interconnected structure. The sol-gel-derived CTFM from ethanol exhibits the better memory performance of retention times for <5 and <10 % charge loss at applied temperature of 25 and 85 degrees C, respectively. The ethanol system CTFM demonstrates a large memory window (similar to 10 V) and good reliability than 2-propanol (similar to 3 V) due to the existence of several isolated crystals in silicon dioxide film.
Nanocrystallization and interfacial tension of sol-gel derived memory
(2008-03-24)
Wu, Chi-Chang
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Tsai, Yi-Jen
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Chu, Min-Ching
;
Yang, Shao-Ming
;
Ko, Fu-Hsiang
The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600 degrees C annealing, and finally transferred into NCs at 900 degrees C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600 degrees C annealing was varied and had higher interfacial energy. The crystallized process at 900 degrees C annealing could minimize the energy. The retention for 900 degrees C annealed sample exhibited less than 30% charge loss after 10(6) s at 125 degrees C measurement. (c) 2008 American Institute of Physics.