Browsing by Author "Tsai, Yu Lin"

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Coreshell InGaN/GaN MQW Nanorod Photovoltaic Device
(2015)
Li, Yun-Jing
;
Tsai, Yu Lin
;
Chang, Jet-Rung
;
Chang, Shih-Pang
;
Lin, Chien-Chung
We report the fabrication and study of coreshell InGaN/GaN multiple quantum well (MQW) nanorod photovoltaic device. The nanorods were fabricated from a GaN substrate by top-down etch, followed by InGaN/GaN MQW growth. The 3D geometry allows higher Indium incorporation and extends the solar absorption spectral range as compared with a planar reference sample. The proof-of-concept coreshell nanorod photovoltaic device has a fill factor of about 54.2%, the short current density of 1.16 mA/cm(2), the open circuit voltage of 0.68 V, and the power conversion efficiency of 0.38%, respectively.
Highly efficient CdS-quantum-dot-sensitized GaAs solar cells
(2012-03-12)
Lin, Chien-Chung
;
Chen, Hsin-Chu
;
Tsai, Yu Lin
;
Han, Hau-Vei
;
Shih, Huai-Shiang
We demonstrate a hybrid design of traditional GaAs-based solar cell combined with colloidal CdS quantum dots. With anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency by as high as 18.9% compared to traditional GaAs-based device. A more detailed study showed an increase of surface photoconductivity due to UV presence, and the fill factor of the solar cell can be improved accordingly. (C) 2012 Optical Society of America
Highly efficient CdS-quantum-dot-sensitized InGaN multiple quantum well solar cells
(2012)
Tsai, Yu Lin
;
Chen, Hsin-Chu
;
Lin, Chien-Chung
;
Han, Hau-Vei
;
Yu, Peichen
We demonstrate a hybrid design of InGaN/GaN multiple quantum well (MQW) solar cells combined with colloidal CdS quantum dots. With anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency by as high as 7.2% compared to the no CdS quantum dots coated device.