Browsing by Author "Tsai Wu-Wei"

Now showing 1 - 3 of 3

Vertical electro-optical component and method of fabricating the same
(2014-05-13)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Tsai Wu-Wei
;
Chao Yu-Chiang
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME
(2012-09-20)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Tsai Wu-Wei
;
Chao Yu-Chiang
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME
(2014-07-31)
Zan Hsiao-Wen
;
Meng Hsin-Fei
;
Tsai Wu-Wei
;
Chao Yu-Chiang
A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.