Browsing by Author "Tsang, Jimmy"

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Electrical characterization of fine-pitch compliant bumps
(2009)
Lin, C. K.
;
Chen, Chih
;
Chang, Shyh-Ming
;
An, Chao-Chyun
;
Lee, Hsiao Ting
The electrical characterization of fine-pitch compliant Au bumps is investigated in this study. Compliant Au bumps of 20 microns pitch were fabricated on a glass substrate for chip-on-glass application. Kelvin probes are fabricated and employed to measure the bump resistance. The resistance ranges from 1.0 to 4.5 ohms, depending on process parameters. Current-carrying capability for these bumps is examined. Electromigration test is performed and it is found that the failure occurs in the wiring Al line on the glass substrate, indicating that the Au bumps have high electromigration resistance. The bump resistance is also measured during thermal cycling from 30 to 110 degrees C, and the resistance increases less than 50 % after 6 cycles. Aging test is also carried out at 60 degrees C and 40 mA, and the failure time is 561 hours.
Electrical characterization of fine-pitch compliant bumps
(2008)
Lin, C. K.
;
Chen, Chih
;
Chang, Shyh-Ming
;
An, Chao-Chyun
;
Lee, Hsiao Ting
The electrical characterization of fine-pitch compliant Au bumps is investigated in this study. Compliant Au bumps of 20 microns pitch were fabricated on a glass substrate for chip-on-glass application. Kelvin probes are fabricated and employed to measure the bump resistance. The resistance ranges from 1.0 to 4.5 ohms, depending on process parameters. Current-carrying capability for these bumps is examined. Electromigration test is performed and it is found that the failure occurs in the wiring Al line on the glass substrate, indicating that the Au bumps have high electromigration resistance. The bump resistance is also measured during thermal cycling from 30 to 110 degrees C, and the resistance increases less than 50% after 6 cycles. Aging test is also carried out at 60 degrees C and 40 mA, and the failure time is 561 hours.
Fine pitch "NCF-type Compliant-bumped COG"
(2007)
An, Chao-Chyun
;
Chang, Shyh-Ming
;
Chen, Ming-Yao
;
Kao, Kuo-Shu
;
Tsang, Jimmy
Non-Conductive-Film (NCF) type of Chip-on-Glass (COG) bonding method ensures the micro-order direct bonding between the IC electrode and glass substrate electrode. The binding force of the applied adhesive achieves electrical connections between the bumps on the IC chip and the electrodes on the glass substrate. The mathematical calculation results of bump stress and bump deformation are used to identify the environmental temperature range for the given COG bonding structure. Both of the calculation and experimental results demonstrate the feasibility of using the compliant bumps to achieve a high compressive stress, high bump deformation and low as well as stable connection resistance at various environmental temperatures. The 1,000 hrs 85 degrees C/85%RH reliability test result will be indicated.
The brand-new high density "NCF=-type compliant-bumped COG" in high resolution LCD
(2007-01-01)
Chang, Shyh-Ming
;
Kao, Kuo-Shu
;
An, Chao-Chyun
;
Chen, Ming-Yao
;
Tsang, Jimmy
Non-Conductive-Film (NCF) bonding method ensures the micro-order direct bonding between the IC electrode and circuit substrate electrode. The binding force of the applied adhesive achieves electrical connections between the bumps on the IC chip and the electrodes on the substrate. The stress analysis results are used to identify the appropriate temperature range for the given NCF bonding structure. Both analytical and experimental results demonstrate the feasibility of using the compliant bumps to achieve a high compressive stress and low as well as stable connection resistance at various environmental temperatures.
Theoretical stress calculation and experimental results of "NCF-type compliant-bumped COG"
(2007)
Chen, Ming-Yao
;
An, Chao-Chyun
;
Chang, Shyh-Ming
;
Kao, Kuo-Shu
;
Tsang, Jimmy
Non-Conductive-Film (NCF) bonding method ensures the micro-order direct bonding between the IC electrode and circuit substrate electrode. The binding force of the applied adhesive achieves electrical connections between the bumps on the IC chip and the electrodes on the substrate. The stress analysis results are used to identify the appropriate temperature range for the given NCF bonding structure. Both analytical and experimental results demonstrate the feasibility of using the compliant bumps to achieve a high compressive stress and low, and stable connection resistance at various environmental temperatures. In addition, the reliability test results will be discussed.