Browsing by Author "Tsao, Yi-Fan"

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Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks
(2020-02-01)
Tsao, Yi-Fan
;
Wuerfl, Joachim
;
Hsu, Heng-Tung
;
國際半導體學院
;
International College of Semiconductor Technology
In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at millimeter frequency range. While the conventional configuration adopted open-stub loading for compensation of the off-state capacitance, radial stubs were introduced in our approach to improve the operational bandwidth of the SPDT switch. Implemented in 0.15 m GaAs pHEMT technology, the proposed configuration exhibited a measured insertion loss of less than 2.5 dB with better than 30 dB isolation level over the frequency range from 33 GHz to 44 GHz. In terms of the bandwidth of operation, the proposed configuration achieved a fractional bandwidth of 28.5% compared to that of 12.3% for the conventional approach. Such superior bandwidth performance is mainly attributed to the less frequency dependent nature of the radial stubs.
Planar Diplexer Design Using Hairpin Resonators Loaded with External Capacitors for Improvement of Isolation and Stopband Rejection Levels
(2019-01-01)
Tsao, Yi-Fan
;
Huang, Ting-Jui
;
Hsu, Heng-Tung
;
Wu, Chia-Wei
;
交大名義發表
We have successfully demonstrated the design and implementation of a planar diplexer operating at 900MHz and 1800MHz intended for cellular system applications. Using hairpin resonators loaded with external capacitors, we managed to obtain 40% size reduction compared to the ones without external loading with substantial improvement in the band-to-band isolation.
Single-pole Double-throw Switch Using Stacked-FET Configuration at Millimeter Wave Frequencies
(2018-01-01)
Mei, Peng-, I
;
Wu, Guan-Wei
;
Hsu, Heng-Shou
;
Huang, Ting-Jui
;
Tsao, Yi-Fan
In this paper, we present single-pole double-throw (SPDT) switch at Ka-band for phased array front-end applications. The proposed switch composed of three shunt arms and a quarter-wave length impedance transformer in series on each branch. The stacked-FET configuration was adopted to enhance the power handling capability. Implemented with 0.15um GaAs pHEMT technology by WIN Semiconductor, the overall chip size was 2 mm by 1 mm. The measured insertion loss was less than 3 dB with better than 25 dB isolation from 15 GHz to 35 GHz. The proposed configuration also featured an input 1 dB compression point of 26 dBm.