Browsing by Author "Tseng, C"

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Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process
(2003)
Chan, KT
;
Chin, A
;
McAlister, SP
;
Chang, CY
;
Tseng, C
Very low power loss less than or equal to 0.6 dB at 110 GHz and noise of < 0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with proton. In contrast, much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of similar to 4 MeV for easier process integration into current VLSI technology.
The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodes
(2003)
Huang, CH
;
Chan, KT
;
Chen, CY
;
Chin, A
;
Huang, GW
As scaling down the RF MOSFET from 0.18 to 0.13 mum technology nodes, the f(T) increases but the NFmin becomes worse by increasing similar to0.2 dB. A small NFmin of 0.93 dB is measured at 5.8 GHz in 0.18 mum MOSFET using 50 fingers but increases as either increasing or decreasing finger number. This abnormal dependence and higher noise at 0.13 mum is accurately analyzed by equivalent circuit model and due to the combined gate resistance and substrate effect.