Browsing by Author "Tseng, Hal-Sin"

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Dielectric anisotropy in the integration of Cu-SiLK (TM) system
(2008-01-01)
Tseng, Hal-Sin
;
Chiou, Bi-Shiou
;
Wu, Wen-Fa
;
Ho, Chia-Cheng
;
電子工程學系及電子研究所
As device density and performance continue to improve, low dielectric constant (k) materials are needed for interlevel dielectric (ILD) applications. The dielectric anisotropy of polymers with low k is an important property to consider for developing ILD. This is on-going research on the integration aspects of Cu-SiLK(TM) system. In this study, the dielectric anisotropy of SiLK polymer was evaluated with two test structures: the metal-insulator-metal (MIM) parallel capacitor structure for the out-of-phase dielectric constant (k(perpendicular to)) and comb-and-serpentine interdigitated structure for the in-plane dielectric constant (k(parallel to)). A k(perpendicular to) of 2.65, a k(parallel to) of 2.75, and a dielectric anisotropy of 3.77% were obtained for SiLK. However, SiLK exhibits larger leakage current as compared to amorphous SiO2 films. The reliability issue on the integration of Cu-SiLK is discussed. (C) 2007 Elsevier B.V. All rights reserved.