Browsing by Author "Tseng, Hung-Ruei"

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Compact Photonic Integrated Chip for Tunable Microwave Generation
(2014-03-01)
Chien, Chen-Yu
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Lo, Yen-Hua
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Wu, Yu-Chang
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Hsu, Shun-Chieh
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Tseng, Hung-Ruei
A tunable microwave generation is demonstrated by monolithically integrated photonic chip, which combines a mirror section and two distributed feedback (DFB) lasers. The focus ion beam technology was employed to achieve high-quality air/semiconductor slab for the mirror. Two DFB lasers (named slave and master lasers, respectively) can operate in a single fundamental mode when they are individually pumped. A microwave signal with the differential frequency between the two lasers can be obtained through optical heterodyning. A tunable microwave signal up to 25.5 GHz can be generated by adjusting the injected currents of the two DFB lasers. A four-wave mixing spectrum was measured and the linewidth of the generated radio frequency signal is 1.9 MHz.
Numerical Analysis of Nano-scale Solar Cells with Surface States
(2015)
Lin, Chien-chung
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Lin, Shih-Li
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Tseng, Hung-Ruei
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Hsu, Shun-Chieh
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Chen, Yin-Han
As the scale of the solar cell moves into nanometer regime, the numerical analysis should evolve at the same pace. By using the Matlab (R) as the tool and solving the general Poisson and continuity equations, we are able to have a good platform for the nano-scale solar cells. By adapting proper parameters, the perovskite solar cells and their behavior under different surface recombination conditions were analyzed.
Numerical study of a highly efficient solar cell with graded band gap design
(2015-05-01)
Tan, Ming-Hsuan
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Tseng, Hung-Ruei
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Kuo, Chien-Ting
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Hsu, Shun-Chieh
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Lo, Yen-Hua
A linearly graded band gap design in the intrinsic layer of a p-i-n solar cell is studied numerically. An ideal model using Matlab (R) is built and the device performance is calculated using continuity equations and an effective band gap model under various band gap combinations. The power conversion efficiency (PCE) can be as high as 30.21%, while the abrupt junction reference device only exhibits 29.25% under the same parameters. This design is also evaluated using the commercial TCAD software APSYS (R), and the calculations show optimal efficiency enhancements of about 1.14-fold that of the abrupt junction device in an AlAs/GaAs system and 2.05-fold that in an InGaN/GaN system. (C) 2015 The Japan Society of Applied Physics
Numerical Study of Graded Bandgap Solar Cells
(2013)
Tan, Ming-Hsuan
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Tseng, Hung-Ruei
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Lo, Yen-Hua
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Hsu, Shun-Chieh
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Tsai, Che-Pin
A novel idea of graded band gap design in intrinsic-layer is proposed and studied numerically. We built our device model by using Matlab (R) coding and commercial software APSYS (R). The device performance is calculated by continuity equations, and effective band gap model. The final calculation shows the optimal efficiency enhancement is about 1.32 and 2.18 times of the non-grading band gap device in GaAs and GaN system, respectively.
Numerical Study of Surface-dependent performances of Nano-scale Solar Cells
(2015)
Lin, Shih-Li
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Tseng, Hung-Ruei
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Hsu, Shun-Chieh
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Chen, Yin-Han
;
Lin, Chien-Chung
A numerical method to correlate the surface recombination velocity and the Fermi-level pinning is provided. This correlation was integrated into the simulation of the GaAs nano-scale solar cells, and the surface-dependent performance of the solar cells can be obtained. This method is also applied to the simulation of the radial-junction nanorod solar cells with sidewall contacts.
Simulation of Charge Collection Probability in GaAs and Si Solar Cells from External Quantum Efficiency
(2015)
Lin, Shih-Li
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Tseng, Hung-Ruei
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Hsu, Shun-Chieh
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Chen, Yin-Han
;
Lin, Chien-Chung
The charge collection probability is one of the most important parameters of a solar cell. We derived two kinds of special functions to fit the external quantum efficiency and use then to reconstruct the charge collection probability. The simulation results of gallium arsenide and silicon solar cells are put into comparison.
Surface Recombination Dependent Performance of A Nano-scale P-n Junction Solar Cell
(2014-01-01)
Tseng, Hung-Ruei
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Hsu, Shun-Chieh
;
Lin, Shih-Li
;
Chen, Yin-Han
;
Lin, Chien-Chung
A nano-scale p-n junction diode is set up for photovoltaic response simulation, and the codes are based on Matlab. environment. The continuity and transport equations for electrons and holes are installed in the program and proper boundary conditions are used. The surface recombination velocity is found to be an influential parameter for the short-circuit current under regular AM1.5 solar excitation. From the simulation, a 35% degradation on Jsc can be expected in the nano-scale device when the surface recombination velocity increases from almost zero to 107 m/s. Meanwhile the reduction of the minority carrier lifetime is not as detrimental as the surface recombination towards the nano-scale photovoltaic device.