Browsing by Author "Tseng, Kuei-Yang"

Now showing 1 - 3 of 3

Evaluation of 2D Negative-Capacitance FETs for Low-Voltage SRAM Applications
(2019-01-01)
Tseng, Kuei-Yang
;
You, Wei-Xiang
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this work, we comprehensively evaluate and analyze the stability and performance of 6T SRAM cells using 2D MFIS-type negative capacitance FETs (2D-NCFETs) based on the IRDS 2030 node with 10-nm gate length. Our results indicate that 2D-NCFETs possess better RSNM than the 2D-FET counterpart under low supply voltages. Our study also shows that 2D-NCFETs have better WSNM except for V-DD = 0.2V due to the existence of hysteresis loop in write curve during write operation. By using write-assist circuits or back-gating techniques, we demonstrate that the WSNM of 2D-NCFETs can be significantly improved. We further analyze the performance of read and write operations, and 2D-NCFETs have been found to possess better performance than 2D-FETs.
Interface Discrete Trap Induced Variability for Negative Capacitance FinFETs
(2018-01-01)
Lee, Ho-Pei
;
Tseng, Kuei-Yang
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Investigation of Ferroelectric Granularity for Double-Gate Negative-Capacitance FETs Considering Position and Number Fluctuations
(2019-01-01)
Fan, Che-Lun
;
Tseng, Kuei-Yang
;
Liu, You-Sheng
;
Su, Pin
;
電子工程學系及電子研究所
Using TCAD atomistic simulation, this work investigates the ferroelectric layer granularity of double-gate (DG) negative-capacitance FETs (NCFET) by considering both position and number fluctuations. Our study indicates that the impacts of the ferroelectric ratio on threshold voltage (V-T) and subthreshold swing (SS) variations exhibit non-monotonic characteristics, and it is important to include the number fluctuation of the ferroelectric grain to accurately account for the overall variation. In addition, smaller grain size not only reduces the V-T and SS variations, but also improves the mean value of the subthreshold swing.