Browsing by Author "Tseng, MH"

Now showing 1 - 2 of 2

A novel process and thermodynamic mechanisms of air gap formation for ULSI application
(2000-11-01)
Chang, KM
;
Yang, JY
;
Chen, LW
;
Tseng, MH
;
電子工程學系及電子研究所
In this study, a novel process to fill the gap between the metal lines on a wafer with air is developed. Reduction of the parasitic wire capacitance in ULSI has become an important issue for future high-speed and low-power applications. Use of low dielectric constant material as inter-level dielectric (ILD) can overcome this problem. Many new low dielectric constant materials are under study and lower dielectric constant and feasibility are the two goals of these researches. The gas-dielectric process has the lowest dielectric constant, 1.0, and its conceptual feasibility is demonstrated. Basic process characterization data, thermodynamic mechanism and requirements for air gap formation are also discussed. We calculated the relationship among the surface tension, the vaporization rate and atmospheric pressure to construct a model of the process window to show that this process is feasible and reproducible. Scanning electron microscope data show that a large area of air gap can be obtained. Basic electrical characteristics data such as I-V and C-V, measured and compared with the conventional PECVD process, show that the air gap has better isolation than PECVD process. (C) 2000 Elsevier Science S.A. All rights reserved.
Using NH3 plasma pretreatment to improve the characteristics of organic spin-on low-k materials for copper metallization
(2001-11-01)
Chang, KM
;
Tseng, MH
;
Deng, IC
;
Tsai, YP
;
Yeh, SJ
Organic low-k materials have got more attention for reducing integrated circuits RC delay time. A serious problem, in degradation of organic low-k materials is induced by ashing step, In this study, an NH3 plasma-treated spin-on low-k material was used as a dielectric layer for Cu metalization. After NH3 plasma treatment for 10 min, the low dielectric constant films can prevent ashing damage without changing their original dielectric constant. An extra advantage of blocking copper diffusion was achieved after NH3 plasma treatment. The improvement of low dielectric constant films was due to an oxynitride film formed on the surface of low dielectric constant film. This oxynitride film also prevents the Cu diffusion/migration into the underlying dielectric and plays a role of passive diffusion barriers.