Browsing by Author "Tseng, T. -Y."

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A high-performance laser energy meter based on anisotropic Seebeck effect in a strongly correlated electronic thin film
(2013-11-01)
Zhang, G. -Y.
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Zheng, H. -R.
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Huang, W. -H.
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Zhang, X. -Y.
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Gao, D. -L.
We have developed a high-performance laser energy meter based on anisotropic Seebeck effect in a strongly correlated electronic (SCE) thin film. SCE thin films, typically represented by high-temperature superconductor (HTS) cuprate and colossal magnetoresistance (CMR) manganite thin films, demonstrate tremendous anisotropic Seebeck effect. In this study, a La2/3Ca1/3MnO3 thin film grown on a tilted LaAlO3 substrate is tested with the fundamental, the second, the third, and the fourth harmonics (1064, 532, 355, 266 nm, respectively) of a Q-switched Nd:YAG laser over a wide range of temperatures from room temperature to 16 K. The peak-value of the laser-induced thermoelectric voltage signal shows a good linear relationship with the laser energy per pulse in the measured wavelength and temperature ranges. The combined advantages over other commercial laser detectors such as nanosecond-order response and spectrally broad and flat response over a wide range of temperatures, in situ real-time measurement, and energy savings, make the device an ideal candidate for next-generation laser detectors and laser power/energy meters.
A novel strongly correlated electronic thin-film laser energy/power meter based on anisotropic Seebeck effect
(2014-09-01)
Zhang, G. -Y.
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Zhang, H.
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Tan, S. -L.
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Zhang, P. -X.
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Tseng, T. -Y.
Strongly correlated electronic (SCE) materials including high-temperature superconducting cuprate and colossal magnetoresistance manganite thin films demonstrate tremendous anisotropic Seebeck effect which makes them very promising for developing high-performance laser detectors. In this work, laser-induced thermoelectric voltage (LITV) signals with nanosecond response time have been measured in SCE La1-xPbxMnO3 thin films based on anisotropic Seebeck effect at room temperature. The magnitude of the LITV signals increases linearly with laser energy/power density in a wide range of laser wavelengths from ultraviolet, visible to infrared based on which a novel SCE thin-film laser energy/power meter has been developed.
A novel strongly correlated electronic thin-film laser energy/power meter based on anisotropic Seebeck effect
(2014-09-01)
Zhang, G. -Y.
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Zhang, H.
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Tan, S. -L.
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Zhang, P. -X.
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Tseng, T. -Y.
Strongly correlated electronic (SCE) materials including high-temperature superconducting cuprate and colossal magnetoresistance manganite thin films demonstrate tremendous anisotropic Seebeck effect which makes them very promising for developing high-performance laser detectors. In this work, laser-induced thermoelectric voltage (LITV) signals with nanosecond response time have been measured in SCE La1-xPbxMnO3 thin films based on anisotropic Seebeck effect at room temperature. The magnitude of the LITV signals increases linearly with laser energy/power density in a wide range of laser wavelengths from ultraviolet, visible to infrared based on which a novel SCE thin-film laser energy/power meter has been developed.
A Volatile RRAM Synapse for Neuromorphic Computing
(2019-01-01)
Covi, E.
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Lin, Y. -H.
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Wang, W.
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Stecconi, T.
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Milo, V.
Neuromorphic computing has emerged as a promising approach for autonomous systems able to learn, adapt, and interact in real time with the environment. To build neuromorphic hardware, the recent development of novel material-based devices such as resistive switching memory (RRAM) has shown to be crucial since this class of devices offers the unique advantage to implement neuron and synaptic functions in silico by device physics, thus avoiding bulky circuits and very complex algorithms. In this work, we first explore volatile switching behaviour of RRAM devices, investigating their ability to capture short-term plasticity (STP) and short-term memory (STM) functionalities. Then, we characterise a volatile RRAM synapse, discussing its potential use in a spiking neural network for speech recognition applications.
Full Low Temperature Microwave Processed Ge CMOS Achieving Diffusion-Less Junction and Ultrathin 7.5nm Ni Mono-Germanide
(2012-01-01)
Lee, Y. -J.
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Chuang, S. -S.
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Liu, C. -I.
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Hsueh, F. -K.
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Sung, P. -J.
For the first time, Ge CMOS with all thermal processes performed by microwave annealing (MWA) has been realized. The full MWA process is under 390 degrees C. It significantly outperforms conventional rapid thermal annealing (RTA) process in 3 aspects: (1) Diffusion-less junction: for easily diffused n-type dopant, phosphorous (P), the ion implantation dopant profile after the MWA activation process remains unchanged. (2) Increased C-ox and lower gate leakage: the low temperature activation process leads to less Ge out-diffusion during MWA than RTA, suppressing the degradation of gate dielectric/ Ge channel interface. (3) Ultrathin 7.5nm Ni mono-germanide with low sheet resistance (Rs) and contact resistivity: after two-step MWA, a thin mono-NiGe layer was obtained which has larger crystallite size to lower Rs. Ge n- and p-MOSFET were also demonstrated. Compared to conventional RTA, the MWA gives 50% and 24% drive current enhancement for p- and n-MOSFET, respectively. These data show that the low temperature MWA is a very promising thermal process technology for Ge CMOS manufacturing.
High Performance Complementary Ge Peaking FinFETs by Room Temperature Neutral Beam Oxidation for Sub-7 nm Technology Node Applications
(2016-01-01)
Lee, Y. -J.
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Hong, T. -C.
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Hsueh, F. -K.
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Sung, P. J.
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Chen, C. -Y.
Ge peaking n- and p-FinFETs have been demonstrated by adopting neutral beam etching (NBE) and anisotropic neutral beam oxidation (NBO) processes. The irradiation-free NB processes not only suppress surface roughness but also guarantee low defect generation on the etched Ge surface. The fabricated Ge peaking FinFETs possess several unique features: (1) A peaking fin configuration with a 6-nm top-gate formed by an anisotropic NBO process at room temperature. (2) Nearly defect-free three dimensional channel surfaces by NB processes. (3) ION and Gm improvement by NB processes as compared to that by conventional inductively coupled plasma etching (ICP). (4) Recorded high I-ON/I-OFF ratio and low subthreshold swing (S.S. similar to 70 mV/dec.) of Ge n-FinFETs. (5) Excellent immunity for short channel effect of Ge FinFETs.
Microwave Annealing
(2012)
Lee, Yao-Jen
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Cho, T. -C.
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Chuang, S. -S.
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Hsueh, F. -K.
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Lu, Y. -L.
Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However the details of the kinetics and mechanisms for microwave annealing are far from well understood. Comparisons between MWA and RTA of dopants in implanted Si has been investigated to produce highly activated junctions. First, As, P-31, and BF2 implants in Si substrate were annealed by MWA at temperatures below 550 degrees C.
Temperature induced complementary switching in titanium oxide resistive random access memory
(2016-07-01)
Panda, D.
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Simanjuntak, F. M.
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Tseng, T. -Y.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400 degrees C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 mu A. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).