Browsing by Author "Tseng, Tseung-Yuan"

Now showing 1 - 4 of 4

A fabrication of germanium nanocrystal embedded in silicon-oxygen-nitride layer
(2006)
Tu, Chun-Hao
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Liu, Hsin-Chou
;
Weng, Chi-Feng
The formation of germanium nanocrystals embedded in silicon-oxygen-nitride (SiON) layer acting as distributed charge storage elements is proposed in this work. A large memory window is observed due to the isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after the high-temperature oxidation of SiGeN layer. The nonvolatile memory device with the Ge nanocrystals embedded in SiON stack layer exhibits 4 V threshold voltage shift under 7 V write operation. Also, the sequent high-temperature oxidation of the SiGeN layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices. (c) 2006 The Electrochemical Society.
Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
(2008-04-14)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Tu, Chun-Hao
;
Lee, Sheng-Kai
In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si(0.5)Ge(0.5)). The deposited film was annealed in oxygen ambient at 650 degrees C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In metal-oxide-insulator-oxide-silicon structure, a significant electrical hysteresis is observed and attributed by the presence of the cobalt-silicide nanocrystals and the oxidized Ge elements. (C) 2008 American Institute of Physics.
Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer
(2006-07-31)
Tu, Chun-Hao
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Liu, Hsin-Chou
;
Tsai, Chia-Chou
The formation of germanium nanocrystals embedded in silicon-oxygen nitride with distributed charge storage elements is proposed in this work. A large memory window is observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after high temperature oxidized SiGeN layer. The nonvolatile memory with the Ge nanocrystals embedded in SiON stack layer exhibits 4 V threshold voltage shift under 10 V write operation. Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices. (c) 2006 American Institute of Physics.
Gate controlled field emission triode and process for fabricating the same
(2009-08-13)
Tseng, Tseung-Yuan
;
Lee, Chia-Ying
;
Li, Seu-Yi
;
Lin, Pang
;
Tseng, Tseung-Yuen
This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.