Browsing by Author "Tseng, Yi-Ming"

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Bipolar Nonlinear Ni/TiO(2)/Ni Selector for 1S1R Crossbar Array Applications
(2011-10-01)
Huang, Jiun-Jia
;
Tseng, Yi-Ming
;
Hsu, Chung-Wei
;
Hou, Tuo-Hung
;
電子工程學系及電子研究所
A bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO(2)/Ni metal-insulator-metal structure. The highly nonlinear current-voltage characteristics are realized by the Schottky emission over the Ni/TiO(2) barriers. The series connection with an HfO(2)-resistive memory device shows reproducible bipolar resistive switching. The maximum array size with at least 10% read margin is projected to exceed megabits. This letter demonstrates the promise of the compact one selector-one resistor (1S1R) cell structure for high-density crossbar array applications.
Bipolar Nonlinear Ni/TiO2/Ni Selector for 1S1R Crossbar Array Applications
(2011-10-01)
Huang, Jiun-Jia
;
Tseng, Yi-Ming
;
Hsu, Chung-Wei
;
Hou, Tuo-Hung
;
電子工程學系及電子研究所
A bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO2/Ni metal-insulator-metal structure. The highly nonlinear current-voltage characteristics are realized by the Schottky emission over the Ni/TiO2 barriers. The series connection with an HfO2-resistive memory device shows reproducible bipolar resistive switching. The maximum array size with at least 10% read margin is projected to exceed megabits. This letter demonstrates the promise of the compact one selector-one resistor (1S1R) cell structure for high-density crossbar array applications.
Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory
(2012-04-01)
Huang, Jiun-Jia
;
Hou, Tuo-Hung
;
Hsu, Chung-Wei
;
Tseng, Yi-Ming
;
Chang, Wen-Hsiung
We report the first demonstration of a flexible one diode-one resistor (1D1R) resistive-switching (RS) memory cell capable of high-density crossbar array implementation at an extremely low cost. A Ti/TiO2/Pt diode with a large rectifying ratio and a stable Ni/HfO2/Pt unipolar RS memory element have been fabricated on a polyimide substrate using only room-temperature processes. No significant degradation of the rectifying ratio of the TiO2 diode and the cycling variations, retention, and read disturb immunity of the HfO2 memory was observed in the bending state. The series 1D1R cell shows highly reproducible unipolar RS because of the low reset current of the HfO2 memory, which greatly mitigates the adverse effect of diode series resistance. Furthermore, the 1D1R cell can effectively suppress read interference and realize a crossbar array as large as 512 kbit. (C) 2012 The Japan Society of Applied Physics
n One Selector-One Resistor (1S1R) Crossbar Array for High-density Flexible Memory Applications
(2011)
Huang, Jiun-Jia
;
Tseng, Yi-Ming
;
Luo, Wun-Cheng
;
Hsu, Chung-Wei
;
Hou, Tuo-Hung
Lack of a suitable selection device to suppress sneak current has impeded the development of 4F(2) crossbar memory array utilizing stable and scalable bipolar resistive-switching. We report a high-performance nonlinear bipolar selector realized by a simple Ni/TiO2/Ni MIM structure with a high current density of 10(5) A/cm(2), and a Ni/TiO2/Ni/HfO2/Pt vertically stacked 1S1R cell capable of gigabit memory implementation. Furthermore, the demonstration of 1S1R array fabricated completely at room temperature on a plastic substrate highlights the promise of future extremely low-cost flexible nonvolatile memory.
One Selector-One Resistor (1S1R) Crossbar Array for High-density Flexible Memory Applications
(2011)
Huang, Jiun-Jia
;
Tseng, Yi-Ming
;
Luo, Wun-Cheng
;
Hsu, Chung-Wei
;
Hou, Tuo-Hung
Lack of a suitable selection device to suppress sneak current has impeded the development of 4F(2) crossbar memory array utilizing stable and scalable bipolar resistive-switching. We report a high-performance nonlinear bipolar selector realized by a simple Ni/TiO2/Ni MIM structure with a high current density of 10(5) A/cm(2), and a Ni/TiO2/Ni/HfO2/Pt vertically stacked 1S1R cell capable of gigabit memory implementation. Furthermore, the demonstration of 1S1R array fabricated completely at room temperature on a plastic substrate highlights the promise of future extremely low-cost flexible nonvolatile memory.