Browsing by Author "Tsong, Tien T."

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Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(100)-2 x 1 surfaces
(2010-01-01)
Hsu, C. C.
;
Lin, W. H.
;
Ou, Y. S.
;
Su, W. B.
;
Chang, C. S.
The growth of Pb films on the Si(1 0 0)-2 x 1 surface has been investigated at low temperature using scanning tunneling microscopy Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed The island thickness is confined within four to nine atomic layers at low coverage Among these islands. those with a thickness of six layers are most abundant Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectioscopy. They are found to be identical to those taken oil the Pb(1 1 1) islands grown oil the Si(1 1 1)7 x 7 surface. Besides Pb(1 1 1) islands. two additional types of Pb islands are formed. rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90 degrees from a terrace to the adjacent one This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 x 1 substrate (C) 2009 Elsevier B.V. All rights reserved
Two-dimensional dopant profiling by electrostatic force microscopy using carbon nanotube modified cantilevers
(2008-08-13)
Chin, Shu-Cheng
;
Chang, Yuan-Chih
;
Hsu, Chen-Chih
;
Lin, Wei-Hsiang
;
Wu, Chih-I
A two-dimensional (2D) dopant profiling technique is demonstrated in this work. We apply a unique cantilever probe in electrostatic force microscopy (EFM) modified by the attachment of a multiwalled carbon nanotube (MWNT). Furthermore, the tip apex of the MWNT was trimmed to the sharpness of a single-walled carbon nanotube (SWNT). This ultra-sharp MWNT tip helps us to resolve dopant features to within 10 nm in air, which approaches the resolution achieved by ultra-high vacuum scanning tunnelling microscopy (UHV STM). In this study, the CNT-probed EFM is used to profile 2D buried dopant distribution under a nano-scale device structure and shows the feasibility of device characterization for sub-45 nm complementary metal-oxide-semiconductor (CMOS) field-effect transistors.