Browsing by Author "Tsukagoshi, Kazuhito"

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Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits
(2014-05-28)
Lin, Yen-Fu
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Xu, Yong
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Wang, Sheng-Tsung
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Li, Song-Lin
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Yamamoto, Mahito
We report ambipolar charge transport in a-molybdenum ditelluride (MoTe2) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (V-bg) and drain-source voltage (V-ds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.
Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities
(2015-08-11)
Lin, Yen-Fu
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Chang, Chia-Hung
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Hung, Tsu-Chang
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Jian, Wen-Bin
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Tsukagoshi, Kazuhito
To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott's variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics.
Origin of Extended UV Stability of 2D Atomic Layer Titania-Based Perovskite Solar Cells Unveiled by Ultrafast Spectroscopy
(2019-06-19)
Thilakan, Anusha Puliparambil
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Li, Jia-Xing
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Chen, Tzu-Pei
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Li, Shao-Sian
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Chen, Chun-Wei
The inherent instability of UV-induced degradation in TiO2-based perovskite solar cells was largely improved by replacing the anatase-phase compact TiO2 layer with an atomic sheet transport layer (ASTL) of two-dimensional (2D) Ti1-delta O2. The vital role of microscopic carrier dynamics that govern the UV stability of perovskite solar cells was comprehensively examined in this work by performing time-resolved pump-probe spectroscopy. In conventional perovskite solar cells, the presence of a UV-active oxygen vacancy in compact TiO2 prohibits current generation by heavily trapping electrons after UV degradation. Conversely, the dominant vacancy type in the 2D Ti1-delta O2 ASTL is a titanium vacancy, which is a shallow acceptor and is not UV-sensitive. Therefore, it significantly suppresses carrier recombination and extends UV stability in perovskite solar cells with a 2D Ti1-delta O2 ASTL. Other carrier dynamics, such as electron diffusion, electron injection, and hot hole transfer processes, were found to be less affected by UV irradiation. Quantitative pump-probe data clearly show a correlation between the carrier dynamics and UV aging of perovskite solar cells, thus providing a profound insight into the factors driving UV-induced degradation in perovskite solar cells and the origin of its performance.
Oxygen-Sensitive Layered MoTe2 Channels for Environmental Detection
(2019-12-18)
Yang, Shih-Hsien
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Lin, Che-Yi
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Chang, Yuan-Ming
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Li, Mengjiao
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Lee, Ko-Chun
The oxygen (O-2)-dependent resistance change of multilayered molybdenum ditelluride (MoTe2) channels was characterized. A variation of the channel resistance could reproducibly determine relative O-2 content (denoted as the O-2 index). We found that Joule heating in a layered MoTe2 field-effect transistor caused the O-2 index to decrease drastically from 100 to 12.1% in back gate modulation. Furthermore, Joule heating caused effective O-2 desorption from the MoTe2 surface and repeatable O-2 detection by multilayered MoTe2 channels was realized. This work not only explored the influence of O-2 on the electrical properties of multilayered MoTe2 channels but also revealed that MoTe2 channels are promising for sensing O-2 in an environmental condition.
Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping
(2018-03-27)
Chang, Yuan-Ming
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Yang, Shih-Hsien
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Lin, Che-Yi
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Chen, Chang-Hung
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Lien, Chen-Hsin
Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe2) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe2, E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance.
Solution-processed organometallic quasi-two-dimensional nanosheets as a hole buffer layer for organic light-emitting devices
(2020-04-07)
Liu, Shihao
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Wang, Ying-Chiao
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Chang, Chi-Ming
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Yasuda, Takeshi
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Fukui, Naoya
Two-dimensional (2D) vdW materials have been integrated into optoelectronic devices to achieve exceptional functionality. However, the integration of large-area 2D thin films into organic light-emitting devices (OLEDs) remains challenging because of the finite number of inorganic 2D materials and the high-temperature requirements of their deposition process. The construction of 2D organometallic materials holds immense potential because of their solution synthesis and unlimited structural and functional diversity. Here, we report a facile route using an oil-water interfacial coordination reaction between organic ligands and divalent metal ions to synthesize crystalline quasi-2D organometallic bis(dithiolato)nickel (NiDT) nanosheets with a centimeter scale and a tunable thickness. The NiDT nanosheets can be directly integrated into OLEDs for use as a hole buffer layer and a fluorescent mounting medium without the aid of a transfer process. Moreover, OLEDs with NiDT nanosheets show not only comparable efficiency to conventional OLEDs but also prolonged device lifetime by nearly 2 times. These results open up a new dimension to use quasi-2D organometallic nanosheets as functional layers in large-area organic devices.
Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2
(2014-04-01)
Yamamoto, Mahito
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Wang, Sheng Tsung
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Ni, Meiyan
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Lin, Yen-Fu
;
Li, Song-Lin
Two-dimensional layered crystals could show phonon properties that are markedly distinct from those of their bulk counterparts, because of the loss of periodicities along the c-axis directions. Here we investigate the phonon properties of bulk and atomically thin alpha-MoTe2 using Raman spectroscopy. The Raman spectrum of alpha-MoTe2 shows a prominent peak of the in-plane E-2g(1) mode, with its frequency upshifting with decreasing thickness down to the atomic scale, similar to other dichalcogenides. Furthermore, we find large enhancement of the Raman scattering from the out-of-plane B-2g(1) mode in the atomically thin layers. The B-2g(1) models Raman inactive in the bulk, but is observed to become active in the few-layer films. The intensity ratio of the B-2g(1) to E-2g(1) peaks evolves significantly with decreasing thickness, in contrast with other dichalcogenides. Our observations point to strong effects of dimensionality on the phonon properties of MoTe2.
Two-dimensional MoTe2 materials: From synthesis, identification, and charge transport to electronics applications
(2016-11-01)
Chang, Yuan-Ming
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Lin, Che-Yi
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Lin, Yen-Fu
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Tsukagoshi, Kazuhito
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電子物理學系
We present a review of recent developments in the synthesis, thickness identification, electronic properties, and possible applications of layered MoTe2 flakes. Special emphasis is made on two-dimensional (2D) MoTe2 semiconductors and the extensive research in recent years on their applications in electronics. Layered MoTe2 flakes have been the focus of substantial interest in the research community because of their fascinating characteristics, including an appropriate band gap and a simple fabrication method (exfoliation) to form layered nanomaterials. Our aim is to provide the readers an overview of layered MoTe2 flakes and to understand their properties, which may lead to their applications in micro- and nanoelectronics. (C) 2016 The Japan Society of Applied Physics