Browsing by Author "Tsung, Kuan-Chang"

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12 similar to 18 GHz Resistive Mixer with a Miniature Marchand Balun using Standard CMOS Process
(2009)
Wei, Hung-Ju
;
Meng, Chinchun
;
Tsung, Kuan-Chang
;
Huang, Guo-Wei
;
電信工程研究所
A 12 similar to 18 GHz fundamental resistive mixer is demonstrated using standard 0.13 mu m CMOS technology. A Marchand Balun directly on lossy silicon substrate is integrated with the resistive mixer to generate equal-amplitude and out-of-phase signal for LO pumping. The size of the Ku-band Marchand balun only occupies 478 mu m x 250 mu m due to higher silicon dielectric constant. The measured conversion loss of the resistive mixer is around 22 dB under f(IF)=3 GHz and P(LO)=6 dBm. The small required LO power reveals that the Marchand balun does not suffer serious loss from silicon substrate. The miniature technique makes passive components more compact and easier to be integrated with IC circuit design.
2.4/5.7-GHz CMOS Dual-Band Low-IF Architecture Using Weaver-Hartley Image-Rejection Techniques
(2009-03-01)
Meng, Chin-Chun
;
Wu, Tzung-Han
;
Syu, Jin-Siang
;
Yu, Sheng-Wen
;
Tsung, Kuan-Chang
A 2.4/5.7-GHz dual-band Weaver-Hartley architecture, using 0.18-mu m CMOS technology, is demonstrated in this paper. The 2.4-GHz signal is set to be the image signal when the desired signal is at 5.7 GHz, and vice versa. Since the Weaver and Hartley systems are combined into this architecture, the demonstrated architecture rejects not only the first image signal, but also the secondary image signal. The image-rejection ratios of the first image signal and the secondary image signal are better than 40 and 46 dB, respectively. In this paper, a diagrammatic explanation is employed to obtain the image-rejection mechanisms of the Weaver-Hartley architecture.
30-GHz mHEMT Divide-by-Three Injection-Locked Frequency Divider With Marchand Balun
(2015)
Chang, Wei-Ling
;
Meng, Chinchun
;
Tsung, Kuan-Chang
;
Huang, Guo-Wei
;
電子工程學系及電子研究所
In this paper, the first fully integrated 0.15-mu m InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) divide-by-three injection locked frequency divider (ILFD) with Marchand balun is demonstrated. The mHEMT technology has 110-GHz cutoff frequency and high tranconductance. Moreover, the Marchand Balun on the semi-insulating GaAs substrate has a low-loss property to provide broadband and balanced differential signals at millimeter wave frequencies. The divide-by-three ILFD performs the locking range from 28.8 GHz to 31.6 GHz under the supply voltage of 6 V and the core current consumption is 17.8 mA.
A Ka-Band pHEMT Regenerative Frequency Divider With Quadrature Outputs
(2011)
Hsiao, Yu-Chih
;
Meng, Chinchun
;
Tsung, Kuan-Chang
;
Huang, Guo-Wei
;
電機學院
This paper proposed a Ka-band divide-by-two quadrature-outputs regenerative divider using the 0.15-mu m AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) technology. The circuit topology consists of one Marchand balun and two Miller dividers. The input Marchand balun with accurately balanced outputs and symmetrical path routing bring about the precisely quadrature outputs of the divider, while the divider operates up to high frequencies thanks to the high performance of the 0.15-mu m pHEMT technology and a semi-insulating substrate. The divider includes a single side-band (SSB) up-converter to verify the quadrature accuracy of the divider\'s outputs. A 35-dB side-band rejection ratio is achieved. The minimum input sensitivity equals 2.7 dBm. The stable division from 32 to 36 GHz in a fractional bandwidth of 12 % can be obtained. This regenerative frequency divider power consumption is 106 mW. Without the SSB test circuit, the layout size is 1.37 x 1.6 mm(2).
K-band CMOS sub-harmonic resistive mixer with a miniature Marchand balun on lossy silicon substrate
(2008-01-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Wu, Po-Yi
;
Tsung, Kuan-Chang
;
電信工程研究所
A K-band sub-harmonically pumped resistive mixer is demonstrated using standard 0.13 mu m CMOS technology. A miniature Marchand Balun is integrated with the resistive mixer to generate equal amplitude and out-of-phase signals for mixer's local oscillation (LO) port directly on the lossy silicon substrate. The sub-harmonic resistive mixer with the integrated Marchand balun has conversion loss of 11-12 dB at f(IF) = 100 MHz and P-LO = 7 dBm for RF frequencies from 18 to 26 GHz. The LO-RF and LO-IF isolations are approximately 30 and 33 dB, respectively.
True 50% Duty-Cycle High-Speed Divider with the Modulus of Odd Numbers
(2009)
Tseng, Sheng-Che
;
Wei, Hung-Ju
;
Syu, Jin-Siang
;
Meng, Chinchun
;
Tsung, Kuan-Chang
This paper proposes a true 50% duty-cycle highspeed prescaler with an odd modulus, based on current switchable D flip-flops. Each D flip-flop can sample data at the positive and negative clock edges, because of the changeable trigger mode. The proposed divide-by-N prescaler, with a 50% duty cycle, is formed as a ring with an N number of D flip-flops. Two types of 50% duty-cycle divide-by-five prescalers, the sample-hold-sample-hold-hold (SHSHH) prescaler and the sample-sample-hold-sample-hold (SSHSH) prescaler, are implemented using the 0.35 mu m SiGe HBT technology. The SHSHH divider has a better performance, up to 7 GHz, thanks to the synchronization of data and control signals.
U-Band pHEMT Divide-by-Three ILFD
(2015)
Chang, Wei-Ling
;
Meng, Chinchun
;
Tsung, Kuan-Chang
;
Huang, Guo-Wei
;
電機工程學系
A fully integrated 0.15-mu m AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) divide-by-three injection locked frequency divider (ILFD) with Marchand balun is demonstrated in this paper. The Marchand Balun provides broadband and balanced differential signals at millimeter wave frequencies due to the low loss GaAs semi-insulating substrate. The divide-by-three ILFD performs a locking range from 44 GHz to 47 GHz at the supply voltage of 6 V and the core current consumption is 6.24 mA.